DC-Magnetron Sputtered Mo Back Contact for Chalcopyrite Thin Film Solar Cells

Authors Haribhau Borate1, Subhash Pandarkar1, Ravindra Waykar1, Ashok Jadhawar1, Bharat Gabhale1, Rahul Aher1, Ajinkya Bhorde1, Shruthi Nair1 , Priti Vairale1, Sandesh Jadkar2
Affiliations

1School of Energy Studies, Savitribai Phule Pune University, Pune 411 007, India

2Department of Physics, Savitribai Phule Pune University, Pune 411 007, India

Е-mail sandesh@physics.unipune.ac.in
Issue Volume 11, Year 2019, Number 1
Dates Received 20 November 2018; revised manuscript received 04 February 2019; published online 25 February 2019
Citation Haribhau Borate, Subhash Pandarkar, Ravindra Waykar, et al., J. Nano- Electron. Phys. 11 No 1, 01022 (2019)
DOI https://doi.org/10.21272/jnep.11(1).01022
PACS Number(s) 81.15.Cd, 73.61.At, 87.64.Dz
Keywords Molybdenum (3) , Resistivity (11) , DC sputtering, AFM (16) , XRD (78) .
Annotation

In present work, Mo films were deposited on corning glass substrates using DC-Magnetron sputtering. Influence of DC sputtering power on electrical, structural, morphological, optical and topological properties has been investigated by using Hall effect, Х-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), UV-Visible spectroscopy, non-contact-atomic force microscopy (NC-AFM) etc. It is observed that electrical resistivity and adhesion of Mo thin film were strongly affected by DC power. The synthesized Mo films were of few micrometer thicknesses (~ 0.9-1.6 (m) with deposition rate in the range of 32-57 nm/min. Cross-hatch cut and Scotch tape adhesion test showed that all Mo films have good adhesion to the substrate. XRD analysis showed that as-deposited Mo films have preferred orientation in (110) direction and with enhancement in its crystallinity and average grain size with an increase in the DC sputtering power. Furthermore, XRD analysis showed that the Mo films deposited at DC sputtering power ( 300 W exhibit tensile strain, while deposited at DC sputtering power ( 350 W – exhibit compressive strain. FE-SEM analysis showed that all Mo films are dense, homogeneous and free of flaws and cracks. In the visible range of the spectrum, an increase in an average reflection of Mo films with DC sputtering power was observed by UV-Visible spectroscopy analysis. NC-AFM characterization revealed that the surface roughness of the films increases with an increase in the DC sputtering power. Hall effect measurements showed that the electrical resistivity of Mo films decreases while charge carrier mobility show increasing trend with increase in DC sputtering power. The obtained results suggest that as-synthesized Mo thin films with DC power ( 300 W have potential application as a back contact material for chalcopyrite compounds based on solar cells due to good adhesion and low electrical resistivity.

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