Growth Structural and Optical Properties of the Thermally Evaporated tin Diselenide (SnSe2) Thin Films
| Authors | R. Sachdeva1 , M. Sharma1, A. Devi1, U. Parihar1 , N. Kumar1 , N. Padha1 , C.J. Panchal2 |
| Affiliations | 1 University of Jammu, Baba Sahib Ambedker Road, 180006, Jammu Tawi, India 2 M. S. University of Baroda 390001, Vadodara, India |
| Е-mail | nareshpadha@yahoo.com |
| Issue | Volume 3, Year 2011, Number 1, Part 3 |
| Dates | Received 04 February 2011, in final form 19 June 2011, published online 23 June 2011 |
| Citation | R. Sachdeva, M. Sharma, A. Devi, J. Nano- Electron. Phys. 3 No1, 507 (2011) |
| DOI | |
| PACS Number(s) | 68.37. Hk, 81.15.Ef, 68.55.aq, 78.66. – w, 61.05.C – |
| Keywords | SnSe2, Thin films (60) , Thermal evaporation (10) , SEM (116) , XRD (95) , Tramsmittance measurements. |
| Annotation |
Tin diselenide (SnSe2) compound was prepared by melt-quenching technique from its constituent elements. The phase structure and composition of the chemical constituents present in the bulk has been determined using X-ray diffraction (XRD) and energy dispersion X-ray analysis (EDAX) respectively. SnSe2 thin films were grown using direct thermal evaporation of SnSe2 compound material on chemically cleaned glass substrate, which were held at different substrate temperatures. X-ray diffraction and Scanning Electron Microscopy (SEM) were used to examine structure and surface morphology of the films. The investigations show that the films grown above 150 °C are single phase and polycrystalline in nature. VIS-IR Spectra of the films were recorded in the wavelength range 380 nm to 1300 nm. The data has been analyzed to find optical parameters like absorption coefficient and energy bandgap. |
|
List of References |
Other articles from this number
1) Ferromagnetism in Nitrogen Doped Magnesium Oxide: a First Principle Study [0453-0459]2) Optical, Electrical and Raman Properties of Annealed Hydrogenated Mg/Co Bilayer Thin Films [0460-0468]
3) Density Functional Modelling of Elastic Properties of Elemental Semiconductors [0469-0473]
4) Effect of Grain Size on the Threshold Voltage for Double-Gate Polycrystaline Silicon MOSFET [0474-0478]
5) Electrical Set-Reset Phenomenon in Thallium Doped Ge-Te Glasses Suitable for Phase Change Memory Applications [0479-0485]
6) Studies on Electrochemical Deposition and Characterization of Co3O4 Films [0486-0498]
7) Dependence of Structural, Electrical, Optical and Surface Morphological Properties of Sol-Gel Spin Coated CdO Thin Films on the Process Temperature [0499-0506]
8) Synthesis and Electroluminescence Characterization of Cadmium Complex [0514-0520]
9) Optoelectric Properties of Thermally Evaporated ClAlClPc Thin Films [0521-0528]
10) Theoretical Study on the Electrical Properties of Some Semiconducting Rare Earth Chalcogenides Sm1-xEuxS and Sm1-xYbxS Under Pressure [0529-0535]
11) Study of Charge Transfer in Semiconducting Rare Earth Chalcogenide Thulium Telluride (TmTe) [0536-0541]
12) Inprovement of Field Emission Properties of PBS Thin Films by Amorphous Carbon Coating [0542-0550]
13) Effect of Number of Filaments on the Structure, Composition and Electrical Properties of µc-Si:h Layers Deposited Using HWCVD Technique [0551-0557]
14) Electrical Characterization of Electron Beam Evaporated Cd1-xSex Thin Films [0558-0562]
15) Optical Behaviour of ZnO/Au Nanojunctions [0563-0568]
16) Two Dimensional Analytical Modeling for SOI and SON MOSFET and Their Performance Comparison [0569-0575]
17) Two-Dimensional Analytical Modeling of Threshold Voltage of Doped Short-Channel Triple-Material Double-Gate (Tm-Dg) MOSFET's [0576-0583]
18) Effect of Radial and Axial Deformation on Electron Transport Properties in a Semiconducting Si-C Nanotube [0584-0589]
19) Nanostructured Hydrogenated Silicon Films by Hot-Wire Chemical Vapor Deposition: the Influence of Substrate Temperature on Material Properties [0590-0600]
20) Laser Induced Nonlinear Optical Properties of Zinc Oxide Thin Film Prepared by Sol-Gel Method [0601-0609]
21) Magnetic and Electric Properties of Semiconduter Bismuth tri Sulphide (Bi2S3) Grown by gel Method [0610-0619]
22) Structural Properties of Nickel Doped Cadmium Sulfide [0620-0625]
