Constants of Electron-Phonon Interaction for Optical and Intervalley Phonons in n-Ge

Authors S.V. Luniov , O.V. Burban

Lutsk National Technical University, 75, Lvivska Str., 43018 Lutsk, Ukraine

Issue Volume 6, Year 2014, Number 1
Dates Received 10 October 2013; published online 06 April 2014
Citation S.V. Luniov, O.V. Burban, J. Nano- Electron. Phys. 6 No 1, 01020 (2014)
PACS Number(s) 72.10. – d, 72.20.Fr
Keywords Intravalley and Intervalley scattering, Constant of electron-phonon interaction, Ellipsoid of revolution, Effective mass tensor, L1 model of conduction band of germanium crystal.
Annotation The electron scattering in case four-ellipsoidal, two-ellipsoidal and single-ellipsoidal L1-model of conduction band of Germanium is investigated. The constants of electron-phonon interaction for optical Ξ430 = 4·108 eV/cm and intervalley phonon Ξ320 = 1,4·108 eV/cm on base of the theory of anisotropy scattering and experimental temperature dependences resistivity are defined. The scattering by optical and intervalley phonon is significant in four-ellipsoidal L1-model of conduction band of n-Ge is shown. The scattering by acoustic phonons is dominated in two and single-valley L1-model.

List of References