Simulation Based Analysis of Temperature Effect on Breakdown Voltage of Ion Implanted Co/n-Si Schottky Diode
| Authors | Vibhor Kumar1,2, J. Akhtar2, Kulwant Singh2,3, Anup Singh Maan1 |
| Affiliations | 1 Department of Physics, M D University, Rohtak, India 2 Sensors and Nanotechnologies Group, CSIR-CEERI, Pilani, India 3 SNST, National Institute of Technology, Calicut, Kerala, India |
| Е-mail | vibhorsoni123@gmail.com |
| Issue | Volume 4, Year 2012, Number 4 |
| Dates | Received 14 April 2012; published online 29 December 2012 |
| Citation | Vibhor Kumar, J. Akhtar, Kulwant Singh, Anup Singh Maan, J. Nano- Electron. Phys. 4 No 4, 04009 (2012) |
| DOI | |
| PACS Number(s) | 85.30.Hi |
| Keywords | Schottky diode (10) , Breakdown voltage, Ion implantation (5) . |
| Annotation |
In semiconductor devices, breakdown voltage variation with temperature is a very significant study, since the reliability and performance of semiconductor devices especially depends upon the temperature. In this paper, the influence of temperature on breakdown characteristic of Ion Implanted edge terminated Co/n-Si Schottky Diode formed on n-Si epitaxial layer has been investigated by using SILVACO TCAD. It is also reported that not only resistive area present in close proximity to the edges of boron ion implanted Schottky diode are responsible for improvement in breakdown voltage but also the formation of PN junction near the edges, affect the breakdown voltage to a significant amount. The dopant concentration of epitaxial layer is 1 × 1015/cm3. The variation in reverse breakdown characteristics as a junction of temperature in the range of 300-1000 K is presented in this paper. A comparative study of breakdown voltages of Ion Implanted and as-prepared Schottky diode is also presented. |
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