Establishment of the Prospective CZTGS Photovoltaic through the Optimization of Some Device Parameters
| Authors | Adeyinka David Adewoyin1, 2 , Abidemi Emmanuel Adeniji3, Imoleayo Deborah Adewoyin2, Kayode Felix Ajayi1 |
| Affiliations |
1Physics Unit, Distance Learning Institute, University of Lagos, Akoka, Lagos, Nigeria 2Department of Physics, University of Lagos, Akoka, Yaba, Lagos State, Nigeria 3Department of Physics, Bells University of Technology, Ota, Ogun State, Nigeria |
| Е-mail | dadeyinka@unilag.edu.ng |
| Issue | Volume 16, Year 2024, Number 2 |
| Dates | Received 27 January 2024; revised manuscript received 18 April 2024; published online 29 April 2024 |
| Citation | Adeyinka David Adewoyin, Abidemi Emmanuel Adeniji et al., J. Nano- Electron. Phys. 16 No 2, 02012 (2024) |
| DOI | https://doi.org/10.21272/jnep.16(2).02012 |
| PACS Number(s) | 84.60.Jt |
| Keywords | CZTGS, Simulation (35) , Efficiency (24) , Thin film (101) , Photovoltaic (13) , Optimization (14) . |
| Annotation |
In this work, numerical modelling and simulation of CZTGS thin film solar cells have been carried out using the Solar Cell Capacitance Simulator (SCAPS-1D). A device structure of AZO/CdS/CZTGS/Mo was modelled using this one-dimensional simulation program. The baseline model of the device gave an efficiency 9.39 %, a fill factor FF 63.61 %, an open circuit voltage Voc 0.86 V, and a short circuit current Jsc 17.39 mA/cm2. The optimization process includes the variation of the absorber layer thickness, doping concentration, and device operating temperature. The optimal values of these parameters include an absorber layer thickness of 2.0 m, a doping concentration of 1 1016 cm – 3 at a thickness of 2.0 m, and an operating temperature of 310 K with a back contact material work function of 5.0 eV. These values will provide essential information and guidelines for the development of a highly efficient and pro-mising CZTGS photovoltaics. |
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List of References |
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