Optimization of the Electrical Characteristics of the Au/n-type InN/InP Schottky Diode Based on the Contact Technique of Different Diameters
| Authors | A. Baghdad Bey1, 2 , A. Talbi2, M. Berka1 , 3 , M.A. Benamara2, F. Ducroquet4, A.H. Khediri2, Z. Benamara2 |
| Affiliations |
1Department of Electrotechnical, University Mustapha STAMBOULI of Mascara, 29000 Mascara, Algeria 2Laboratory AMEL, University of S.B.A, 22000 Sidi Bel Abbés, Algeria 3Laboratory E.P.O, University of S.B.A, 22000 Sidi Bel Abbés, Algeria 4University of Grenoble Alpes, Grenoble INP, IMEP-LaHC, 38000 Grenoble, France |
| Е-mail | baghdadbey68a@yahoo.fr |
| Issue | Volume 12, Year 2020, Number 3 |
| Dates | Received 03 February 2020; revised manuscript received 15 June 2020; published online 25 June 2020 |
| Citation | A. Baghdad Bey, A. Talbi, M. Berka, et al., J. Nano- Electron. Phys. 12 No 3, 03027 (2020) |
| DOI | https://doi.org/10.21272/jnep.12(3).03027 |
| PACS Number(s) | 85.30.Kk |
| Keywords | Conductance (4) , Ideality factor (10) , Potential barrier, Series resistance, Schottky diode. IVCVGV InNInPAun. |
| Annotation |
Optimization of electrical characteristics for electronic components is a main objective for the majority of recent research in this field. In this work, an experimental study of the Schottky diode is realized. This study is based on the proposal of a new measurement approach which concerns the Schottky contact technique by metallization of gold. The structure studied is composed of the InP substrate of selected section (1cm × 1cm), thickness of the order of 350 μm and cut out in the crystallographic plane (100). On this substrate, a thin layer of InN (2 nm) is engraved. We have used gold (Au) for two different values of diameters placed one next to the other in an alternative way; large ( 1.366038 mm) and small ( = 0.815575 mm). Our measurement technique has allowed us to obtain the electrical characteristics of the Schottky diode I-V, C-V and G-V. These measurements allowed us to calculate the ideality factor ( 1.79, 2.58), the saturation current (, ), the potential barrier ( 0.66 eV, eV) and the series resistance (, ) of our diode for the two diameters. The measurement results obtained on our Au/n-type InN/InP diode show the optimized electrical characteristics of the studied Schottky diode. In the logic of comparison of our work, we compared the obtained results for each contact and also the important results of other recent works for the same field of research. This comparison showed us a good agreement from the point of view of numerical values as well as the effectiveness of our proposed measurement approach. |
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List of References |
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