Enhancement of Performance of a-Si:H Solar Cells by Introducing a p-nc-SiOx:H Nanostructure Buffer Layer
| Authors | A. Belfar1, A.J. Garcia-Loureiro2 |
| Affiliations |
1Laboratory of Plasma Physics, Conductor Materials and their Applications, Faculty of Physics, Oran University of Sciences and Technology Mohamed Boudiaf USTO-MB, BP1505 Oran, Algeria 2Centro de Investigación en Tecnoloxías da Información (CITIUS), University of Santiago de Compostela, Santiago de Compostela, Spain |
| Е-mail | abbasbelfar@gmail.com |
| Issue | Volume 12, Year 2020, Number 3 |
| Dates | Received 14 January 2020; revised manuscript received 15 June 2020; published online 25 June 2020 |
| Citation | A. Belfar, A.J. Garcia-Loureiro, J. Nano- Electron. Phys. 12 No 3, 03003 (2020) |
| DOI | https://doi.org/10.21272/jnep.12(3).03003 |
| PACS Number(s) | 73.40.Lq, 78.20.Bh |
| Keywords | Solar cell (51) , a-Si:H (2) , p-nc-SiOx:H, i-a-SiC:H, Buffer layer (2) , Simulation (35) , Spectral response. |
| Annotation |
In this work, single n-i-p solar cells based on hydrogenated amorphous silicon (a-Si:H) are analyzed using one dimensional AMPS-1D (Analysis of Microelectronic and Photonic Structures) code. Effect of introducing a p-layer based on hydrogenated nanocrystalline silicon oxide (p-nc-SiOx:H) as a buffer layer at i/p interface instead of i-layer based on hydrogenated amorphous silicon carbide (i-a-SiC:H) is analyzed. It is found that the incorporation of p-nc-SiOx:H buffer layer at i/p interface reduces the band mismatch between i-a-Si:H absorber layer and p+-nc-SiOx:H window layer and minimizes the defect density near interface. It is also obtained that the spectral response of the solar cell has improved in the wavelength range from 0.48 to 0.7 m with using p-nc-SiOx:H window/p-nc-SiOx:H buffer dual p-layers. So, an enhancement of the output solar cell performances with using p-nc-SiOx:H buffer layer has obtained. In this case, the short circuit current (Jsc) increases from 10.18 mA/cm2 with i-a-SiC:H buffer layer to 13.44 mA/cm2 with p-nc-SiOx:H buffer layer, the open circuit voltage (VOC) improves from 930 mV to 941 mV and the fill factor (FF) increases from 74.2 % to 76.5 %. As a consequence, the conversion efficiency increases from 7.03 % to 9.67 %. |
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List of References |
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