BSIM3v3 Characterization and Simulation of MOS Si1 – xGex Transistors with 130 nm Submicron Technology
| Authors | M. Hebali1,2 , M. Bennaoum1 , M. Benzohra3, D. Chalabi2 , A. Saïdane2 |
| Affiliations |
1Department of Electrotechnical, University Mustapha STAMBOULI Mascara, 29000 Mascara, Algeria 2Laboratory: CaSiCCe, ENP Oran-MA, 31000 Oran, Algeria 3Department of Networking and Telecommunications, University of Rouen, Laboratory LECAP, 76000, France |
| Е-mail | mourad.hebali@univ-mascara.dz |
| Issue | Volume 11, Year 2019, Number 4 |
| Dates | Received 13 February 2019; revised manuscript received 02 August 2019; published online 22 August 2019 |
| Citation | M. Hebali, M. Bennaoum, M. Benzohra, et al., J. Nano- Electron. Phys. 11 No 4, 04021 (2019) |
| DOI | https://doi.org/10.21272/jnep.11(4).04021 |
| PACS Number(s) | 85.30.Tv |
| Keywords | Si1 – Gex, BSIM3v3 (2) , 130 nm technology, I-V characterization, Temperature (46) . |
| Annotation |
A prospective of work and a feasibility study are undertaken on MOSi1 – xGex transistors with a 130 nm submicron technology. BSIM3v3 model has been used to analyze the transistors’ operation, according to the study of the effect of Germanium fraction x (x ( 0 to x ( 1) on electrical performance of these transistors taking into account the influence of temperature. PSpice parameters of two different transistors NMOS1 – xGex and PMOS1 – xGex have been calculated and used in the modeling. The output and transfer electrical characteristics have been determined in the temperature range – 200 to 200 °C. The regime sub-threshold was also addressed by calculating ION and IOFF currents as a function of VGS for constant VDD. Simulation results show that the above transistors work properly in a regime under a threshold voltage of about 1.2 V. They can be used in low voltage and low power microelectronics by controlling the germanium x fraction. |
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List of References |
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