Authors | V.V. Kosyak1, A.S. Opanasyuk1 , P.V. Koval1, P.M. Fochuk2, V.V. Starikov3 |
Affiliations | 1 Sumy State University, 2, Rimsky-Korsakow str., 40007 Sumy, Ukraine 2 Chernovitsky National University, 2, Kotsiubynsky str., 58012 Chernivtsi, Ukraine 3 National Technical University "KhPI", 21, Frunze str., 61002 Kharkiv, Ukraine |
Е-mail | opanasyuk_sumdu@ukr.net, p.fochuk@chnu.edu.ua, vadym_starikov@mail.ru |
Issue | Volume 3, Year 2011, Number 2 |
Dates | Received 10 January 2011, in final form 08 February 2011, published online 02 April 2011 |
Citation | V.V. Kosyak, A.S. Opanasyuk, P.V. Koval, J.Nano- Electron. Phys. 3 No2, (2011) (English version in progress) |
DOI | |
PACS Number(s) | 68.37.Hk, 78.66.Hf, 81.15.Ef |
Keywords | Cd1 – xMnxTe solid solution films, Transmission coefficient (2) , Reflection coefficient (3) , Wide band gap (2) , Layer composition. |
Annotation |
Study of the optical properties of Cd1 – xMnxTe films obtained by the close spaced sublimation technique was carried out. Measuring of the optical characteristics of the layers was performed by the spectrophotometric analysis method near the “red boundary” of the semiconductor photoactivity. This research allowed to obtain the spectrum distributions of the transmission T(λ), reflection R(λ) and absorption α(λ) coefficients of the films as well as estimate the band-gap energy of the compound. The values of the band-gap energy were used for determination of manganese concen-trations in the films depending on the growth conditions. |
List of References |