Influence of the Additional Ni Layers on Structure and Magnetoresistive Properties of Thin Film Systems Based on Co and Cu

Authors V.B. Loboda1 , Yu.O. Shkurdoda1 , V.N. Kolomiets1, L.V. Dekhtyaruk2
Affiliations 1 Sumy State Pedagogical University, 87, Romens'ka Str., 40002 Sumy, Ukraine
2 Kharkiv State Technical University of Building and Architecture, 40, Sumska Str., 61002 Kharkiv, Ukraine
Е-mail shkurdoda@rambler.ru
Issue Volume 3, Year 2011, Number 2
Dates Received 28 December 2010, in final form 25 February 2011, published online 02 April 2011
Citation V.B. Loboda, Yu.O. Shkurdoda, V.N. Kolomiets, L.V. Dekhtyaruk, J.Nano- Electron. Phys. 3 No2, (2011) (English version in progress)
DOI
PACS Number(s) 72.10.Fk, 72.15.Lh, 73.40.Jn, 73.50.Gr, 73.50.Jt, 75.30.Vn
Keywords Nanocrystalline film systems, Crystalline structure, Resistivity (11) , Magnetoresistance (6) , Giant magnetoresistance.
Annotation
Here, we present the investigation results of the structural-phase state, electrical and magnetoresistive properties (anisotropic magnetoresistance, giant magnetoresistance) for three-layered nanocrystalline thin film Co/Cu/Co systems with additional ferro-magnetic Ni layers in an oil-free ultrahigh vacuum. Influence of Ni layers, which are embedded on the boundary between layers or within the ferromagnetic Co layer, on the value of the GMR effect, is shown.

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