Results (8):

Title Effects of Interfacial Charges on Doped and Undoped HfOx Stack Layer with Tin Metal Gate Electrode for Nano-Scaled CMOS Generation
Authors S. Chatterjee, Y. Kuo
Issue Volume 3, Year 2011, Number 1, Part 1
Pages 0162 - 0169
Title Pt-Ti/ALD-Al2O3/p-Si MOS Capacitors for Future ULSI Technology
Authors Ashok M. Mahajan, Anil G. Khairnar, Brian J. Thibeault
Issue Volume 3, Year 2011, Number 1, Part 4
Pages 0647 - 0650
Title Role of Interface Charges on High-k Based Poly-Si and Metal Gate Nano-Scale MOSFETs
Authors N. Shashank, Vikram Singh, W.R. Taube, R.K. Nahar
Issue Volume 3, Year 2011, Number 1, Part 5
Pages 0937 - 0941
Title Analog and RF Performance Evaluation of Dual Metal Double Gate High-k Stack (DMDG-HKS) MOSFETs
Authors Santosh K. Gupta, S. Baishya
Issue Volume 5, Year 2013, Number 3
Pages 03008-1 - 03008-8
Title Synthesis of Cerium Dioxide High-k Thin Films as a Gate Dielectric in MOS Capacitor
Authors Anil G. Khairnar, Y.S. Mhaisagar, A.M. Mahajan
Issue Volume 5, Year 2013, Number 3
Pages 03002-1 - 03002-3
Title Effects of High-k Dielectrics with Metal Gate for Electrical Characteristics of SOI TRI-GATE FinFET Transistor
Authors Fatima Zohra Rahou, A.Guen Bouazza, B. Bouazza
Issue Volume 8, Year 2016, Number 4
Pages 04037-1 - 04037-4
Title Impact of the High-K Dielectric Material as Spacer on Analog and RF Performance of the GS-DG-FinFET
Authors A. Pattnaik, Sruti S. Singh, S.K. Mohapatra
Issue Volume 11, Year 2019, Number 6
Pages 06028-1 - 06028-7
Title Numerical Simulation of FinFET Transistors Parameters
Authors І.P. Buryk, A.O. Golovnia, M.M. Ivashchenko, L.V. Odnodvorets
Issue Volume 12, Year 2020, Number 3
Pages 03005-1 - 03005-4