Two-Dimensional Analytical Modeling of Threshold Voltage of Doped Short-Channel Triple-Material Double-Gate (Tm-Dg) MOSFET's
| Автори | Sarvesh Dubey, Dheeraj Gupta, Pramod Kumar Tiwari, S. Jit |
| Афіліація | Department of Electronics Engineering, Institute of Technology, Banaras Hindu University, 221005, Varanasi, India |
| Е-mail | sjit.ece@itbhu.ac.in |
| Випуск | Том 3, Рік 2011, Номер 1, Part 3 |
| Дати | Received 04 February 2011, published online 23 June |
| Цитування | Sarvesh Dubey, Dheeraj Gupta, Pramod Kumar Tiwari, S. Jit, J. Nano- Electron. Phys. 3 No1, 576 (2011) |
| DOI | |
| PACS Number(s) | 85.30.De, 85.30.Tv |
| Ключові слова | DG MOSFET (2) , Surface potential (9) , Threshold voltage (15) , Parabolic approximation, ATLAS (4) . |
| Анотація |
In this paper, a short-channel threshold voltage model is presented for triple-material double-gate(TM-DG) MOSFET with uniform doping profile in the channel region. To obtain the channel potential expression, the two-dimensional (2D) Poisson’s equation has been solved using the parabolic potential approximation with suitable boundary conditions. Subsequently, the surface potential expression has been employed to derive an analytical expression of thresholod. The threshold voltage variation with various device parameters has been shown. To validate the model, ATLASTM based numerical simulation results have been used. |
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