Study of Charge Transfer in Semiconducting Rare Earth Chalcogenide Thulium Telluride (TmTe)
| Автори | S. Ariponnammal , S.K. Rathiha, S. Chandrasekaran |
| Афіліація | Department of Physics, Gandhigram Rural Institute, Deemed University, Gandhigram – 624302, Dindigul District, Tamil Nadu, India |
| Е-mail | ariponnammal@yahoo.co.in |
| Випуск | Том 3, Рік 2011, Номер 1, Part 3 |
| Дати | Received 04 February 2011, in final form 18 June 2011, published online 23 June 2011 |
| Цитування | S. Ariponnammal, S.K. Rathiha, S. Chandrasekaran, J. Nano- Electron. Phys. 3 No1, 536 (2011) |
| DOI | |
| PACS Number(s) | 72.10. – d, 72.15.Qm, 72.20. – i |
| Ключові слова | Tmte, Chalcogenide (14) , Charge transfer (3) , Valence fluctuation, XRDP. |
| Анотація |
The study of charge transfer in rare earth chalcogenide semiconductor TmTe has been carried out by using experimental and theoretical X-ray powder diffraction (XRPD) data. The direction and amount of charge transfer are inferred by plotting and comparing the structure factor of the components. Thus, a charge transfer of 0.15 electrons is obtained in TmTe from Tm to Te. |
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