Theoretical Study on the Electrical Properties of Some Semiconducting Rare Earth Chalcogenides Sm1-xEuxS and Sm1-xYbxS Under Pressure
| Автори | S. Ariponnammal , S. Chandrasekaran |
| Приналежність | Department of Physics, Gandhigram Rural Institute, Deemed University, Gandhigram – 624302, Dindigul District, Tamilnadu, India |
| Е-mail | ariponnammal@yahoo.co.in |
| Випуск | Том 3, Рік 2011, Номер 1, Part 3 |
| Дати | Received 04 February 2011, in final form 18 June 2011, published online 23 June 2011 |
| Посилання | S. Ariponnammal, S. Chandrasekaran, J. Nano- Electron. Phys. 3 No1, 529 (2011) |
| DOI | |
| PACS Number(s) | 72.10. – d, 72.20. – i |
| Ключові слова | Rare earth chalcogenide, Semiconductor (62) , Lattice constant (2) , Activation energy (7) , Electrical transport properties. |
| Анотація |
A theoretical study on semiconductor rare earth chalcogenides Sm1 – xEuxS and Sm1 – x YbxS has been made for deducing electrical transport properties using only two parameters, namely lattice constant and activation energy. The calculated electrical properties electrical resistivity, carrier mobility, carrier concentration, carrier effective mass and dielectric constant are compared with the available experimental results. They are found to be in good agreement with each other. Then, the limitation of this theoretical study has also been discussed in this paper. |
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