Diffusion Processes and Interface Electron Scattering in Film Systems Based on Cu/Fe and Fe/Cr
| Authors | O.V. Synashenko1 , A.I. Saltykova2 , I.Yu. Protsenko1 |
| Affiliations | 1 Sumy State University, 2, Rimsky-Korsakov Str., 40007, Sumy, Ukraine 2 Sumy State Pedagogical University of A.S. Makarenko, 87, Romens’ka Str., 40002, Sumy, Ukraine |
| Е-mail | protsenko@aph.sumdu.edu.ua |
| Issue | Volume 1, Year 2009, Number 2 |
| Dates | Received 8 September 2009, in final form 2 October 2009 |
| Citation | O.V. Synashenko, A.I. Saltykova, I.Yu. Protsenko, J. Nano- Electron. Phys. 1 No2, 79 (2009) |
| DOI | |
| PACS Number(s) | 66.30.Pa, 68.35.Fx, 72.10.Fk |
| Keywords | Diffusion profile, SIMS, Diffusion coefficient (2) , Interface roughness, Interface transmission coefficient. |
| Annotation |
Investigation results of diffusion processes by the SIMS and the AES methods in Cu/Fe and Fe/Cr film systems are represented; influence of the annealing temperature on the effective thermal diffusion coefficients is studied. Values of the interface transmission coefficient and the effective diffusion coefficients in different processes, namely, the condensation-stimulate diffusion, the ion-stimulate one, and the thermal diffusion, are calculated. |
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List of References |
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