Diffusion Processes and Interface Electron Scattering in Film Systems Based on Cu/Fe and Fe/Cr

Authors O.V. Synashenko1 , A.I. Saltykova2 , I.Yu. Protsenko1
Affiliations

1 Sumy State University, 2, Rimsky-Korsakov Str., 40007, Sumy, Ukraine

2 Sumy State Pedagogical University of A.S. Makarenko, 87, Romens’ka Str., 40002, Sumy, Ukraine

Е-mail protsenko@aph.sumdu.edu.ua
Issue Volume 1, Year 2009, Number 2
Dates Received 8 September 2009, in final form 2 October 2009
Citation O.V. Synashenko, A.I. Saltykova, I.Yu. Protsenko, J. Nano- Electron. Phys. 1 No2, 79 (2009)
DOI
PACS Number(s) 66.30.Pa, 68.35.Fx, 72.10.Fk
Keywords Diffusion profile, SIMS, Diffusion coefficient, Interface roughness, Interface transmission coefficient.
Annotation
Investigation results of diffusion processes by the SIMS and the AES methods in Cu/Fe and Fe/Cr film systems are represented; influence of the annealing temperature on the effective thermal diffusion coefficients is studied. Values of the interface transmission coefficient and the effective diffusion coefficients in different processes, namely, the condensation-stimulate diffusion, the ion-stimulate one, and the thermal diffusion, are calculated.

List of References