Diffusion Processes and Interface Electron Scattering in Film Systems Based on Cu/Fe and Fe/Cr

Authors O.V. Synashenko1 , A.I. Saltykova2 , I.Yu. Protsenko1

1 Sumy State University, 2, Rimsky-Korsakov Str., 40007, Sumy, Ukraine

2 Sumy State Pedagogical University of A.S. Makarenko, 87, Romens’ka Str., 40002, Sumy, Ukraine

Е-mail protsenko@aph.sumdu.edu.ua
Issue Volume 1, Year 2009, Number 2
Dates Received 8 September 2009, in final form 2 October 2009
Citation O.V. Synashenko, A.I. Saltykova, I.Yu. Protsenko, J. Nano- Electron. Phys. 1 No2, 79 (2009)
PACS Number(s) 66.30.Pa, 68.35.Fx, 72.10.Fk
Keywords Diffusion profile, SIMS, Diffusion coefficient, Interface roughness, Interface transmission coefficient.
Investigation results of diffusion processes by the SIMS and the AES methods in Cu/Fe and Fe/Cr film systems are represented; influence of the annealing temperature on the effective thermal diffusion coefficients is studied. Values of the interface transmission coefficient and the effective diffusion coefficients in different processes, namely, the condensation-stimulate diffusion, the ion-stimulate one, and the thermal diffusion, are calculated.

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