ZnTe/CdTe Thin-Film Heterojunctions

Authors M.M. Kolesnyk1, A.S. Opanasyuk1 , N.V. Tyrkusova1, S.N. Danilchenko2

1 Sumy State University, 2, Rimsky-Korsakov Str., 40007, Sumy, Ukraine

2 Institute of Applied Physics, National Academy of Science of Ukraine, 58, Petropavlivs’ka Str., 40030, Sumy, Ukraine

Е-mail maxxkol@yahoo.com
Issue Volume 1, Year 2009, Number 2
Dates Received 25 June 2009, in final form 8 July 2009
Citation M.M. Kolesnyk, A.S. Opanasyuk, N.V. Tyrkusova, S.N. Danilchenko, J. Nano- Electron. Phys. 1 No2, 8 (2009)
PACS Number(s) 73.40.Lq, 73.61.Ga
Keywords ZnTe/CdTe heterojunctions, Structure factor, Grain size (4) , Current-voltage characteristic (12) , Charge-transport mechanism.
In this work we have studied the structural and electrophysical properties of the ZnTe/CdTe heterojunctions, obtained by the method of thermal evaporation in quasi-closed volume. Investigations allowed to define the films structural parameters, such as texture, lattice constant, sizes of grains and coherent-scattering domains, micro-deformation level, and their dependence on the conditions of films production as well. Electrophysical investigations allowed to define the charge-transport mechanism in heterojunction.

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