A Co-relative study on DDR Diamond and Si-based IMPATTs in Terahertz Regime
| Authors | A. Das , S.J. Mukhopadhyay |
| Affiliations |
Department of Electronics and Communication Engineering, Brainware University, Barasat, Kolkata - 125, West Bengal, India |
| Е-mail | u.call.me.arnab@gmail.com |
| Issue | Volume 18, Year 2026, Number 1 |
| Dates | Received 03 April 2025; revised manuscript received 18 August 2025; published online 29 August 2025 |
| Citation | A. Das, S.J. Mukhopadhyay, J. Nano- Electron. Phys. 18 No 1, 01017 (2026) |
| DOI | https://doi.org/10.21272/jnep.18(1).01017 |
| PACS Number(s) | 77.55.df, 81.05.ug |
| Keywords | Diamond (4) , IMPATT (2) , Large Signal, Silicon (58) , Terahertz. |
| Annotation |
The possibility of a type-IIb diamond as the foundation for double-drift region (DDR) impact avalanche transit time (IMPATT) devices that operate at THz frequencies has been investigated. In this study, the large-signal (L-S) simulation model is employed. The top cut-off frequency for DDR type-IIb diamond IM-PATTs is 1.5 THz, while for Silicon (Si) IMPATTs, it is 0.5 THz. According to the Large signal simulation da-ta, the diamond IMPATT (DIMPATT) device exhibits a peak RF power of 891mW with an 11.02% conversion efficiency at 0.3 THz, taking voltage modulation of 50%. Whereas for Si IMPATTs the RF output power 173 mW with a 3% conversion efficiency is obtained for the same percentage of voltage modulation. A co-relative study has been presented for DDR IMPATT based on Si and type-IIb diamond, which shows the superiority of DIMPATT, in terms of power and DC to RF conversion efficiency at the THz domain. |
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