Barrier Inhomogeneities of Al/p-In2Te3 Thin Film Schottky Diodes

Authors R.R. Desai1, D. Lakshminarayana2, Ramesh Sachdeva4, P.B. Patel2 , C.J. Panchal3 , M.S. Desai3, N. Padha4
Affiliations

1 Department of Chemistry, Sardar Patel University, Vallabh Vidyanagar-388120, Gujarat, India

2 Department of Electronics, Sardar Patel University, Vallabh Vidyanagar-388120, Gujarat, India

3 Applied Physics Department, Faculty of Technology and Engineering, M. S. University of Baroda, Vadodara-390001, Gujarat, India

4 Department of Physics and Electronics, Dr. Ambedkar Road, University of Jammu, Jammu-180 006, Jammu and Kashmir, India

Е-mail [email protected]
Issue Volume 3, Year 2011, Number 1, Part 5
Dates Received 04 February 2011, in final form 30 November 2011, published online 08 December 2011
Citation R.R. Desai, D. Lakshminarayana, Ramesh Sachdeva, et al., J. Nano- Electron. Phys. 3 No1, 995 (2011)
DOI
PACS Number(s) 73.30. + y, 85.30.De
Keywords p-In2Te3 thin film, Schottky diode (10) , Current-voltage (I-V) characteristics, Capacitance-voltage (C-V) (2) , Barrier height (11) .
Annotation
The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of p-In2Te3/Al thin films Schottky diodes papered by Flash Evaporation technique were measured in the temperature range 303-335 K have been interpreted on the basis of the assumption of a Gaussian distribution of barrier heights (φbo) due to barrier height inhomogeneities that prevail at the interface. It has been found that the occurrence of Gaussian distribution of BHs is responsible for the decrease of the apparent BH (φbo) and increase of the ideality factor (η). The inhomogeneities are considered to have a Gaussian distribution with a mean barrier height of (φbm) and standard deviation (σs) at zero-bias. Furthermore, the activation energy value (φb) at T = 0 and Richardson constant (A**) value was obtained as 0.587 eV and 3.09 Acm– 2 K– 1 by means of usual Richardson plots. Hence, it has been concluded that the temperature dependence of the I-V characteristics of p-In2Te3/Al Schottky Diodes can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the BHs.

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