Hydrogen Treatment of Gold Contact on Silicon

Authors A.G.Vasiljev1, О.I.Kozonushchenko1, T.A.Vasyliev1, , V.V. Zhuravel1, TP. Doroshenko2

1Institute of High Technologies, T. Shevchenko National University of Kyiv, 4g, Glushkova Ave., 03022 Kyiv, Ukraine

2V.E. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 45, Nauka Ave., 03028 Kyiv, Ukraine

Е-mail taras.a.vasiliev@gmail.com
Issue Volume 11, Year 2019, Number 3
Dates Received 25 February 2019; revised manuscript received 12 June 2019; published online 25 June 2019
Citation A.G.Vasiljev, О.I.Kozonushchenko, T.A.Vasyliev, et al, J. Nano- Electron. Phys. 11 No 3, 03003 (2019)
DOI https://doi.org/10.21272/jnep.11(3).03003
PACS Number(s) 73.61. − r, 66.30. − h, 68.35.Fx
Keywords р-silicon, Hydrogen treatment, Hydrogen (20) , Gold contact, Diffusion (9) , Resistivity (8) .

Plate of p-silicon of 0.35 mm thickness was the sample of present studies. Two gold film contacts of 50 nm thickness were deposited on the opposite surfaces of p-silicon sample. For the manufacturing of gold film contacts the method of direct contact heating in a tungsten boat was used. The surface of the silicon plate was activated before the deposition of gold by dipping the samples into a 0.5 % solution of hydrofluoric acid. The silicon wafer was then washed with distilled water, dried and placed in a container for substrates. After deposition of the gold film contact, the plate of p-silicon was cut in several samples. The hydrogen treatment of only one gold film contact was executed by means of electrolysis in 10 % water solution of H2SO4.The gold contact was the cathode and the graphite electrode was the anode. The second gold film contact was isolated during the electrolysis. The electrolysis lasted for 6 min. The current density during electrolysis was 117.5 A/m2. The p-silicon samples with gold contacts processed by hydrogen were stored at room conditions. The time dependence of the volt-ampere characteristics of the samples was investigated. The resistance of the gold film contact increased in the first few hours after hydrogen processing. But then, during the week after hydrogen treatment, the resistance of the gold film contact constantly diminished. During the next week, the resistance of the gold film contact did not change. The hydrogen saturation of the gold film contact caused the significant reduction of the resistance of the gold contact. After treatment and exposure at room conditions, the final resistance of the gold film contact decreased by almost 1.5 times in comparison with the contact resistance before hydrogen treatment.