Modification of the Defective Structure of Silicon under the Influence of Radiation

Authors G.P. Gaidar, M.B. Pinkovska, M.I. Starchyk
Affiliations

Institute for Nuclear Research of the NAS of Ukraine, 47, Nauky Prosp., 03028 Kyiv, Ukraine

Е-mail gaydar@kinr.kiev.ua
Issue Volume 11, Year 2019, Number 3
Dates Received 05 March 2019; revised manuscript received 10 June 2019; published online 25 June 2019
Citation G.P. Gaidar, M.B. Pinkovska, M.I. Starchyk, J. Nano- Electron. Phys. 11 No 3, 03010 (2019)
DOI https://doi.org/10.21272/jnep.11(3).03010
PACS Number(s) 61.82.Fk
Keywords Silicon (58) , Irradiation (10) , Fluence, Ion beams, Defect structure.
Annotation

The features of defect formation in the surface and near-surface silicon layers under the influence of irradiation with beams of high-energy ions of gases of various masses are investigated and the prospects of using such ion beams are shown for the technology of radiation doping of semiconductors. It has been established that the degree of Si damage both in the ion path region and in the braking region of ions rises and becomes more complex with an increase in the energy and mass of the ions. The greatest structural damages were observed in the ion braking region, where the concentration of defects was maximal. It was revealed that the structure of the path range after irradiation with protons did not change significantly, in contrast to the heavily damaged structure after irradiation with alpha particles. More orderly and narrower lines of stress associated with defects were observed in Si irradiated with protons, and their number and location relative to the braking line depended on the ion beam intensity. It was established for Si irradiated with alpha particles that the area of their braking consists of the voids with various sizes and shapes etched as a continuous layer and in the form of individual clusters, accompanied by dislocation loops that were formed. It was found that complex structure of the deuteron braking band in Si is due to the presence of dislocations in the initial Si, their movement and interaction with radiation defects at irradiation. The definitive picture of the formation and ordering of defects is determined by the interaction of growth and radiation defects and temperature at irradiation. Changes in the width of the etched braking band in the range from 20 to 200 μm, depending on the mass of ions, are revealed. The minimal width of the braking band for all types of radiation was obtained at the edge of irradiated area, where the sample temperature was lower due to cooling, and the maximal one was obtained in the center of irradiated area.

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