Detrmination of the Si-PIn Detector Active Zone Thickness Using Analytic Line Intensity Wavelength Dependence of the Single-Component Standards
| Authors | А.А. Mamaluy, L.P. Fomina, A.I. Mikhailov |
| Affiliations | National Technical University “Kharkiv Polytechnical Institute” 21, Frunze Str., 61002, Kharkov, Ukraine |
| Е-mail | m_if@ukr.net |
| Issue | Volume 2, Year 2010, Number 4 |
| Dates | Received 23 December 2010, in final form 15 January 2011 |
| Citation | А.А. Mamaluy, L.P. Fomina, A.I. Mikhailov, J. Nano- Electron. Phys. 2 No4, 169 (2010) |
| DOI | |
| PACS Number(s) | 07.85.Fv |
| Keywords | X-ray fluorescent radiation, Analytical lines, Detector (10) , Active zone, Secondary radiator. |
| Annotation |
The simple procedure of the detector active zone thickness determination is proposed, in which the fluxes of fluorescent radiation analytical lines from single-component samples excited by monochromatic radiation of a secondary radiator are used as the known fluxes. The superposition of experimental and calculated curves of the analytical line intensity versus the wavelength allows determination of the active zone thickness d = 170 μm with an accuracy of ± 10 μm. |
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List of References |
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