Impact of Body Material on Electrical Characteristics of Raised Source Drain Double Gate JLFET

Authors R. Swargiary1, K.C.D. Sarma1, B.N. Thakur2
Affiliations

1Department of Instrumentation Engineering, Central Institute of Technology, 783370 Kokrajhar, India

2Department of Electrical and Electronics Engineering, Bhilai Institute of Technology, 481001 Chhattisgarh, India
Е-mail ph22ie1001@cit.ac.in
Issue Volume 18, Year 2026, Number 3
Dates Received 24 February 2026; revised manuscript received 23 June 2026; published online 26 June 2026
Citation R. Swargiary, K.C.D. Sarma, B.N. Thakur, J. Nano- Electron. Phys. 18 No 3, 03014 (2026)
DOI https://doi.org/10.21272/jnep.18(3).03014
PACS Number(s) 72.80.Ga, 85.30.Tv
Keywords JLFET (6) , Double gate (4) , Raised source drain, Body materials.
Annotation

This paper presents the influence of body material properties on electrical characteristics of Raised Source Drain Double Gate Junctionless Field-Effect Transistor (RSD DG JLFET). A mathematical analysis of the drain current, threshold voltage and subthreshold swing considering Raised Source Drain region is performed to understand the device behavior. The study is carried out using TCAD-based simulations with five semiconductor materials: Silicon (Si), Germanium (Ge), Silicon Carbide (SiC), Gallium Nitride (GaN) and Gallium Arsenide (GaAs). The simulation results reveal that compound semiconductors particularly SiC and GaN demonstrate superior electrical performance compared to elemental semiconductors such as Si and Ge, primarily due to their higher carrier mobility and wider bandgap. The study systematically analyzes key device parameters including channel thickness, channel length, gate oxide thickness and gate oxide dielectric constant to assess their impact on device performance. The analysis indicates that SiC and GaN exhibit higher drain current, improved threshold voltage stability and lower subthreshold swing resulting in better device efficiency and reduced leakage currents under elevated temperatures. Overall, the findings demonstrate that wide-bandgap compound semiconductors, such as SiC and GaN, are highly promising for high-performance and thermally robust nanoelectronic applications.

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