| Authors | R. Mukherji1, V. Mathur2, M. Mukherji3 |
| Affiliations |
1IcfaiTech, The ICFAI University, Jaipur, India 2School of Arts and Science, Physics Division, American International University, Kuwait 3Amity University Rajasthan, Jaipur, India |
| Е-mail | rana.mukherji@gmail.com |
| Issue | Volume 18, Year 2026, Number 3 |
| Dates | Received 15 January 2026; revised manuscript received 15 June 2026; published online 26 June 2026 |
| Citation | R. Mukherji, V. Mathur, et al., J. Nano- Electron. Phys. 18 No 3, 03035 (2026) |
| DOI | https://doi.org/10.21272/jnep.18(3).03035 |
| PACS Number(s) | 85.75.d, 75.50.Pp, 75.50.Bb, 77.84.Bw |
| Keywords | Room-temperature ferromagnetism, ZnO (100) , Hydrogenation (2) , Rational function model, Vibrating sample magnetometer. |
| Annotation |
Room-temperature ferromagnetism (RTFM) remains challenging to achieve in ZnO-based dilute magnetic semiconductors (DMS) co-doped with transition metals because of complex defect interactions. To explain the non-linear magnetization behavior of hydrogenated Zn0.25Co0.75O:H specimen is reported here. The specimen was made by a solid-state process and was hydrogenated at 550 °C for 12 hours. The room temperature magnetic hysteresis was measured with a Vibrating Sample Magnetometer (VSM) and analyzed by non-linear least squares fitting in MATLAB based proposed rational model. The optimized model parameters, i.e., βSE = 0.3782, φI = – 0.0222, and δd = 2.4433, indicate increased magnetic saturation, weak inhibitive behavior, and high damping associated with oxygen vacancy-type defects, respectively. The results provide support to the rational model as a powerful approach to describe defect-induced ferromagnetism and provide guidelines to the design and optimization of spintronic materials presenting magnetic ordering at room temperature. |
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