Experimental Method to Quantify the Leakage Currents of Solar Cells from Current Density-Voltage Characteristics

Authors K. Mahi1, 2 , H. Aït-Kaci2
Affiliations

1 Department of Physics, Faculty of Sciences of the Matter, University of Tiaret, BP P 78 Zaaroura, Tiaret, Algeria

2 Laboratory of Plasma Physics, Conductor Materials and their Applications, Faculty of Physics, Oran University of Sciences and Technology Mohamed Boudiaf USTO-MB, BP1505 Oran, Algeria

Е-mail khaled.mahi@univ-tiaret.dz, mahikhalidou@yahoo.fr
Issue Volume 13, Year 2021, Number 5
Dates Received 21 June 2021; revised manuscript received 20 October 2021; published online 25 October 2021
Citation K. Mahi, H. Aït-Kaci, J. Nano- Electron. Phys. 13 No 5, 05019 (2021)
DOI https://doi.org/10.21272/jnep.13(5).05019
PACS Number(s) 84.60.Jt, 72.15.Qm
Keywords Solar cell model, Transport mechanisms, Parameter extraction, Photocurrent (2) , Ideality coefficient, Shunt conductance.
Annotation

To ameliorate the function and performance of photovoltaic and thermo-photovoltaic systems and cells, it is important to comprehend the physical properties of their components and transport processes occurring within their structures. A correct analysis of the current density-voltage behavior of a cell is then necessary. Cells often exhibit a non-ideal behavior due to parasitic effects attributed to the so-called series and shunt resistances. In this case, the extraction of cell parameters like reverse saturation current and ideality coefficient, which can give valuable information about charge transport mechanisms responsible for the currents in the cell, becomes quite difficult. In this work, to avoid mathematical and numerical complexity in the analysis of a current density-voltage (J-V) characteristic of a device, we propose a simple experimental method for using such characteristics, quantify the leakage currents characterizing a device and correct the experimental J-V data. The results obtained from our method are largely in compliance with the theoretical J-V characteristics.

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