Features of Formation of Ohmic Contacts and Gate on Epitaxial Heterostructure of AlGaN / GaN High Electron Mobility Transistor

Authors I.A. Rogachev, A.V. Knyazkov, O.I. Meshkov, A.S. Kurochka
Affiliations

JSC "RPC "Istok" named after Shokin", 2A, Vokzalnaya st., 141190 Fryazino, Moscow region, Russia

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Issue Volume 8, Year 2016, Number 2
Dates Received 12 March 2016; published online 21 June 2016
Citation I.A. Rogachev, A.V. Knyazkov, O.I. Meshkov, A.S. Kurochka, J. Nano- Electron. Phys. 8 No 2, 02044 (2016)
DOI 10.21272/jnep.8(2).02044
PACS Number(s) 73.40.Lq, 85.30.Kk
Keywords Gallium nitride (2) , Ohmic contacts (2) , Encapsulation, Gate AlGaN / GaN HEMT.
Annotation Reported about study of processes of formation of Ti / Al / Ni / Au ohmic contacts to heterostructures AlGaN / GaN and gate Ni / Au. Investigated of process recess the semiconductor layer for minimum resistance of ohmic contact – 0.4 Ohm·mm. Studied influence of encapsulation ohmic contacts on their surface morphology.

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