Structural Engineering Vacuum-plasma Coatings Interstitial Phases

Authors O.V. Sobol′

National Technical University «Kharkiv Polytechnic Institute», 21, Frunze St., 61002 Kharkiv, Ukraine

Issue Volume 8, Year 2016, Number 2
Dates Received 24 March 2016; revised manuscript received 13 June 2016; published online 21 June 2016
Citation O.V. Sobol′, J. Nano- Electron. Phys. 8 No 2, 02024 (2016)
DOI 10.21272/jnep.8(2).02024
PACS Number(s) 81.07.Bc, 61.05.сp,, 61.82.Rx
Keywords Structural engineering, Vacuum plasma coating, Interstitial phases, Metastable, Diffusion (9) , Structural transformation, Shift mechanism, Stresses (2) .

The analysis of possible structural conditions defined nonequilibrium processes in vacuum-plasma methods of obtaining interstitial phase coatings. It is shown that nonequilibrium conditions the deposition of ion-plasma flows significantly expands the range of possible structural states formed material from amorphous like to highly ordered crystalline. High speed determines the thermalization phase forming cubic crystal lattice (in most cases the structural type NaCl). On examples of W-C and Ta-N system with a hexagonal lattice type in equilibrium conditions and shows the mechanism of the transition from a metastable state with a cubic lattice in equilibrium with a hexagonal crystal lattice. The transition is performed by diffusion-shear transformation with the formation of stacking faults in the alternation of the most densely packed planes along the [111] axis. The formation of stacking faults contribute to a small area of the shift in nanocrystalline materials and the availability of jobs, and shift the conversion itself (through the formation of stacking faults) is accompanied by a sudden relaxation of the structural stresses. Based on the atomic mobility criterion discussed mechanisms of structural transformations in the vacuum-plasma coatings and the necessary physical and technological conditions for structural changes aimed at the stage of precipitation and high temperature annealing.