Results (16):

Title Effect of Gate Length Scaling on Various Performance Parameters in DG-FinFETs: a Simulation Study
Authors Rakesh Vaid, Meenakshi Chandel
Issue Volume 4, Year 2012, Number 3
Pages 03007-1 - 03007-6
Title Study of Short Channel Effects in n-FinFET Structure for Si, GaAs, GaSb and GaN Channel Materials
Authors Tawseef A. Bhat, M. Mustafa, M.R. Beigh
Issue Volume 7, Year 2015, Number 3
Pages 03010-1 - 03010-5
Title Effects of High-k Dielectrics with Metal Gate for Electrical Characteristics of SOI TRI-GATE FinFET Transistor
Authors Fatima Zohra Rahou, A.Guen Bouazza, B. Bouazza
Issue Volume 8, Year 2016, Number 4
Pages 04037-1 - 04037-4
Title Simulation and Performance Analysis of 32 nm FinFet based 4-Bit Carry Look Adder
Authors S. Rashid, S. Khan, A. Singh,
Issue Volume 9, Year 2017, Number 5
Pages 05003-1 - 05003-4
Title Electrical Сharacterization of Ge-FinFET Transistor Based on Nanoscale Channel Dimensions
Authors Ahmed Mahmood, Waheb A. Jabbar, Yasir Hashim, Hadi Bin Manap
Issue Volume 11, Year 2019, Number 1
Pages 01011-1 - 01011-5
Title Impact of the High-K Dielectric Material as Spacer on Analog and RF Performance of the GS-DG-FinFET
Authors A. Pattnaik, Sruti S. Singh, S.K. Mohapatra
Issue Volume 11, Year 2019, Number 6
Pages 06028-1 - 06028-7
Title Numerical Simulation of FinFET Transistors Parameters
Authors І.P. Buryk, A.O. Golovnia, M.M. Ivashchenko, L.V. Odnodvorets
Issue Volume 12, Year 2020, Number 3
Pages 03005-1 - 03005-4
Title Effect of High-k Dielectric Materials on Short Channel Effects of a 14 nm Tri-Gate SOI FinFET for Reduced Area on Chip
Authors S. Nanda, R.S. Dhar
Issue Volume 13, Year 2021, Number 3
Pages 03015-1 - 03015-4
Title Impact of High-k Dielectric Materials on Short Channel Effects in Tri-gate SOI FinFETs
Authors Zohmingmawia Renthlei, Swagat Nanda, Rudra Sankar Dhar
Issue Volume 13, Year 2021, Number 5
Pages 05013-1 - 05013-6
Title Si- and Ge-FinFET Inverter Circuits Optimization Based on Driver to Load Transistor Fin Ratio
Authors Yasir Hashim, Safwan Mawlood Hussein
Issue Volume 13, Year 2021, Number 6
Pages 06011-1 - 06011-4
Title Evaluation of Device Fabrication from FET to CFET: A Review
Authors J. Lakshmi Prasanna, M. Ravi Kumar, Ch. Priyanka, Chella Santhosh
Issue Volume 13, Year 2021, Number 6
Pages 06030-1 - 06030-8
Title Improvement Analysis of Leakage Currents with Stacked High-k/Metal Gate in 10 nm Strained Channel HOI FinFET
Authors Payal Kumari, Swagat Nanda, Priyanka Saha, Rudra Sankar Dhar
Issue Volume 14, Year 2022, Number 2
Pages 02004-1 - 02004-4
Title Combined (Si) and (Ge) FinFET-CMOS Inverter Characterization Based on Driver to Load Transistor Ratio
Authors Yasir Hashim, Safwan Mawlood Hussein
Issue Volume 14, Year 2022, Number 5
Pages 05003-1 - 05003-6
Title Power and Threshold Voltage Analysis of 14 nm FinFET 12T SRAM Cell for Low Power Applications
Authors P. Parthasarathi, T.S. Arun Samuel, P. Vimala, N. Arumugam
Issue Volume 14, Year 2022, Number 5
Pages 05008-1 - 05008-6
Title High Temperature Effects on the Static Performance of 14 nm TG SOI N FinFET
Authors A. Lazzaz, K. Bousbahi, M. Ghamnia
Issue Volume 15, Year 2023, Number 2
Pages 02005-1 - 02005-5
Title Temperature Impact on the Characteristics of N-Channel GaP Fin Field Effect Transistor (GaP-FinFET)
Authors Y. Hashim
Issue Volume 16, Year 2024, Number 1
Pages 01018-1 - 01018-4