Автори | N. Shashank, Vikram Singh, W.R. Taube, R.K. Nahar |
Приналежність | Central Electronics Engineering Research Institute Council of Scientific and Industrial Research, Pilani-333031, Rajasthan, India |
Е-mail | Shashank@ceeri.ernet.in |
Випуск | Том 3, Рік 2011, Номер 1, Part 5 |
Дати | Received 04 February 2011, published online 08 December 2011 |
Посилання | N. Shashank, Vikram Singh, W.R. Taube, R.K. Nahar, J. Nano- Electron. Phys. 3 No1, 937 (2011) |
DOI | |
PACS Number(s) | 85.30.Tv, 83.10.Rs |
Ключові слова | MOSFET (30) , High-k (13) , Interface charges, Mobility (10) , Metal gates. |
Анотація |
The characteristics of typical sub-100 nm high K gate dielectrics MOSFET with different gate materials are simulated by two dimensional device simulators (ATLAS and ATHENA). The impact of interface charges on the characteristics of Poly-Si and TiN metal gate MOSFETs are investigated. The simulation results shows that, at high interface charge densities, the devices with Poly-Si gate degrade much compared to metal gate MOSFET structures. Emphasis is given to study the mobility degradation which stands as a major hurdle with the implementation of high-k dielectrics in nano-scale devices. The advantages of using Watt model over other models for the extraction of channel mobility is also clearly explained. The performance of the high-k MOSFET with metal electrode and poly-silicon electrode is also compared for various interface state charges. |
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