A 2-D Analytical Threshold Voltage Model for Symmetric Double Gate MOSFET's Using Green’s Function
| Автори | Anoop Garg, S.N. Sinha, R.P. Agarwal |
| Приналежність | Indian Institute of Technology Roorkee, Roorkee, 247667, Roorkee, India |
| Е-mail | ashugarg.iit@gmail.com |
| Випуск | Том 3, Рік 2011, Номер 1, Part 5 |
| Дати | Received 04 February 2011, published online 08 December 2011 |
| Посилання | Anoop Garg, S.N. Sinha, R.P. Agarwal, J. Nano- Electron. Phys. 3 No1, 894 (2011) |
| DOI | |
| PACS Number(s) | 85.30. – z, 85.30.De |
| Ключові слова | Green’s function, Minimum surface potential, Threshold voltage (15) , Symmetric DG-MOSFET, Two dimensional (2D) Poisson equations and undoped or lightly doped. |
| Анотація |
We propose a new two dimensional (2D) analytical solution of Threshold Voltage for undoped (or lightly doped) Double Gate MOSFETs. We have used Green’s function technique to solve the 2D Poisson equation, and derived the threshold voltage model using minimum surface potential concept. This model is assumed uniform doping profile in Si region. The proposed model compared with existing literature and experimental data and we obtain excellent agreements with previous techniques. |
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Перелік посилань |
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