| Автори | Dennai Benmoussa1, M. Boukais2, H. Benslimane1 | 
| Афіліація | 1 Physics Laboratory in Semiconductor Devices, University of Bechar, Algeria 2 (URMER), University Abou Bakr Belkaid, B.P. 119, Tlemcen, Algeria  | 
| Е-mail | deennai_benmoussa@yahoo.com, meri_232000@yahoo.fr | 
| Випуск | Том 8, Рік 2016, Номер 1 | 
| Дати | Одержано 29.11.2015, у відредагованій формі - 03.03.2016, опубліковано online - 15.03.2016 | 
| Цитування | Dennai Benmoussa, M. Boukais, H. Benslimane, J. Nano- Electron. Phys. 8 No 1, 01009 (2016) | 
| DOI | 10.21272/jnep.8(1).01009 | 
| PACS Number(s) | 73.50.Pz, 88.40.jr | 
| Ключові слова | Optimization (14) , Photovoltaic cell (4) , GaInP/GaAs AMPS-1D, Hetetro-junction. | 
| Анотація | Photovoltaic conversion is the direct conversion of electromagnetic energy into electrical energy continuously. This electromagnetic energy is the most solar radiation. In this work we performed a computer modelling using AMPS 1D optimization of hetero-junction solar cells GaInP / GaAs configuration for p/n. We studied the influence of the thickness the base layer in the cell offers on the open circuit voltage, the short circuit current and efficiency. | 
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