Автори | V.N. Murashev1 , S.Yu. Yurchuk1 , S.A. Legotin1 , V.P. Yaromskiy2 , Yu.V. Osipov1, V.P. Astahov1 , D.S. El’nikov1 , S.I. Didenko1 , O.I. Rabinovich1 , K.A. Kuz’mina1 |
Афіліація | 1 NUST “MISiS”, 4, Leninskiy Prosp., 119040 Moscow, Russia 2 JSC "Scientific-production plant for measure technique”, 2, Pioneer St., 141070, Moscow region, Korolev, Russia |
Е-mail | |
Випуск | Том 7, Рік 2015, Номер 2 |
Дати | Одержано 27.04.2015, опубліковано online - 10.06.2015 |
Цитування | V.N. Murashev, S.Yu. Yurchuk, S.A. Legotin, et al., J. Nano- Electron. Phys. 7 No 2, 02023 (2015) |
DOI | |
PACS Number(s) | 00.05.Tp, 85.60.Jb |
Ключові слова | Silicon p-i-n-photodiode characteristics simulation, Spectral sensitivity (2) , Optimization design of photodetectors. |
Анотація | In this paper the simulation of the silicon p-i-n-photodiodes spectral sensitivity characteristics was carried out. The analysis of the semiconductor material characteristics (the doping level, lifetime, surface recombination velocity), the construction and operation modes on the photosensitive structures characteristics in order to optimize them were investigated. |
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