Authors | T.P. Hovorun , S.I. Protsenko , V.A. Pchelintsev, A.M. Chornous |
Affiliations | Sumy State University, 2, Rimsky-Korsakov Str., 40007, Sumy, Ukraine |
Е-mail | achornous@nis.sumdu.edu.ua |
Issue | Volume 1, Year 2009, Number 4 |
Dates | Received 24.11.2009, in final form 02.12.2009 |
Citation | T.P. Hovorun, S.I. Protsenko, V.A. Pchelintsev, A.M. Chornous, J. Nano- Electron. Phys. 1 No4, 90 (2009) |
DOI | |
PACS Number(s) | 68.60. – р, 68.35.Fx, 68.60.Dv |
Keywords | Grain-boundary diffusion, Diffusion processes, Grain boundary, Thin coating, Average grain size. |
Annotation |
Investigation results of the grain-boundary diffusion in Сu films with thin Ni coating and in Ni films with thin Cu coating by the low-temperature resistometric method are presented in this work. It is shown that during the coating deposition and thermal annealing the irreversible increase in the electrical resistance by the value from tenth parts to a few Ohms is observed. This is caused by the diffusion processes of coating atoms on the grain boundaries of base layers. |
List of References |