Sonochemical Synthesis of AgInS2 Quantum Dots and Characterisation
| Authors | B.B. Panda1,2, R.K. Rana1, B. Sharma1 |
| Affiliations | 1 Nanomaterials Laboratory, I & PC division, CSIR – Indian Institute of Chemical Technology, Hyderabad-500007, India 2 Department of Chemistry, Indira Gandhi Institute of Technology, Sarang, Dhenkanal, Odisha-759146, India |
| Е-mail | |
| Issue | Volume 9, Year 2017, Number 2 |
| Dates | Received 15 December 2016; published online 28 April 2017 |
| Citation | B.B. Panda, R.K. Rana, B. Sharma, J. Nano- Electron. Phys. 9 No 2, 02002 (2017) |
| DOI | 10.21272/jnep.9(2).02002 |
| PACS Number(s) | 81.07.Ta, 68.35.bg, 73.50.Rb |
| Keywords | Silver Indium Sulphide quantum dots, Sonochemical method, Characterisation (2) , Band gap (29) , Dislocation density (4) . |
| Annotation | AgInS2 (Silver Indium Sulphide) quantum dots of size ∼ 1.4 nm have been prepared by sonochemical method using precursor complex. Dodecylamine has been used as capping agent. The Precursor complex, containing Silver, Indium metal ions and sulphur used for the synthesis of the quantum dots has been prepared by simple precipitation and filtration. Then the complexes have been irradiated under high intensity ultrasound to get small size AgInS2 quantum dots within short reaction duration of ∼ 5 minutes. The prepared quantum dots then have been characterised by XRD, UV-VIS spectroscopy, fluorescence spectroscopy and DLS analysis. The results show that AgInS2 can be prepared by sonochemical method in small time period. From the UV-VIS absorbance spectroscopy the band gap of the prepared material calculated is found to be around 2.15 eV. Some physical parameters of the prepared material have also been calculated from XRD and UV-VIS spectroscopy using some empirical relations. |
|
List of References |
Other articles from this number
1) Effect of Single and Double Layer Antireflection Coating to Enhance Photovoltaic Efficiency of Silicon Solar [02001-1-02001-4]2) Assessment of the H2 Followed by Air Sintering of Co-doped In2O3 Based Diluted Magnetic Semiconductors [02003-1-02003-3]
3) Analysis on Solar Panel Crack Detection Using Optimization Techniques [02004-1-02004-5]
4) Effect the Technique of Light Trapping on the Performance of Simple Junction n-p Solar Cells Based on GaAs and Si [02005-1-02005-3]
5) Smoluchowski Formulation for Simulation of Nano Core-Shell Structure Creation in Nanoparticle Fabrication by Laser Ablation in Liquid Media Process [02006-1-02006-4]
6) Obtaining of Nanocrystals ZnS:Mn by Means of Self-Propagating High-Temperature Synthesis [02007-1-02007-4]
7) Flexible Solar Cells are Based on Underlying Layers of CdTe Obtained by Magnetron Sputtering [02008-1-02008-4]
8) Synthesis of Anatase/Brookite Nanocomposite with Controlled Structural and Morphological Characteristics [02009-1-02009-6]
9) Tunable Bandpass Transmission Line Based on Uniaxial Single-Crystal Hexaferrites in Multidomain Area [02010-1-02010-5]
10) Structure and Sorption Characteristics of NiCrxFe2 – xO4 Ferrite Powders [02011-1-02011-7]
11) The Energy Spectrum of the Acoustic Emission Signals of Nanoscale Objects [02012-1-02012-4]
12) Two-Dimensional Graphene Superlattice:Energy Spectrum and Current-Voltage Characteristics [02013-1-02013-4]
13) Effect of Synthetic Discrete Fibers on the Properties of Epoxy Composites for Protective Means of Transportation Coatings [02014-1-02014-5]
14) Effect of Tantalum on the Texture of Copper Vacuum Condensates [02015-1-02015-5]
15) The Effect of Boron Impurity on the Structure and Mechanical Properties of Hafnium [02016-1-02016-5]
16) The Exact Nonrelativistic Energy Eigenvalues for Modified Inversely Quadratic Yukawa Potential Plus Mie-type Potential [02017-1-02017-7]
17) Thermally Stimulated Luminescence of ZnO Nanowires [02018-1-02018-3]
18) Thermally Evaporated Tin Oxide Thin Film for Gas Sensing Applications [02019-1-02019-4]
19) Thin Films of Amorphous Molecular Semiconductors for Generating Surface Templates of Regulated Structures [02020-1-02020-6]
20) Маgnetoresistive Effect in Granular Film Alloys Based on Ag and Fe or Со [02021-1-02021-4]
21) Photoluminescence Properties of PECVD Si-C-N Films [02022-1-02022-6]
22) Temperature dependence of the NQR spectrums and the lattice parameter InSe [02023-1-02023-4]
23) The Kinetic Effects, Caused by Thickness Fluctuations of Quantum Semiconductor Wire [02024-1-02024-4]
24) Ostwald Ripening of the InAsSbP/InAs(100) Quantum Dots in the Framework of the Modified LSW Theory [02025-1-02025-6]
25) Methods of Obtaining and Properties of Wear-resistant Coatings Based on Ti and N and Ti, Al and N [02026-1-02026-7]
26) The Transition Processes in Microelectronic Ag-Ge-In/n-GaAs Compositions [02027-1-02027-5]
27) On the Critical Size of the Transition of a Ferromagnet into a Single-Domain State [02028-1-02028-17]
28) Reduction of Interface Mixing in Sc/Si Multilayer X-ray Mirrors [02029-1-02029-6]
29) Nonlocal Model Pseudopotential Calculations of the Electronic Structure of AIIBVI (CdS, CdSe) Bulk Crystals and Nanocrystals [02030-1-02030-7]
30) А Computer Simulation of Radiation-Induced Structural Changes and Properties of Multiperiod ZrNx/MoNx System [02031-1-02031-5]
31) The Formation of Regular Domain Structures in Ferroelectrics under Switching Polarization in High-nonequilibrium Conditions [02032-1-02032-7]
32) Characterization of Thermally Oxidized Ti6Al4V Alloys for Dental Application [02033-1-02033-3]
33) Research of the Vacancy Migration Process on the Surface of BC Nanolayer [02034-1-02034-2]
