Texturation of the Phosphide Indium Surface
| Authors | Ya.A. Suchikova1 , V.V. Kidalov1 , О.S. Balan1, G.A. Sukach2 |
| Affiliations | 1 Berdyansk State Pedagogical University, 4, Shmidta Str., 71100, Berdyansk, Ukraine 2 V. Lashkaryov’s Institute of Semiconductor Physics NASU, 41, Nauky Av., 03028, Kyiv, Ukraine |
| Е-mail | v.v.kidalov@mail.ru |
| Issue | Volume 2, Year 2010, Number 1 |
| Dates | Received 13.04.2010, in final form - 29.04.2010 |
| Citation | Ya.A. Suchikova, V.V. Kidalov, О.S. Balan, G.A. Sukach, J. Nano-Electron. Phys. 2 No1, 50 (2010) |
| DOI | |
| PACS Number(s) | 61.43Gt, 78.30Fs, 78.55m |
| Keywords | Phosphide indium, Photoelectrochemical etching, Scaning electron microscopy, Pyramidal clusters, Crystal anisotropy. |
| Annotation |
In this work the photoelectrochemiocal method texturation of the monocristal InP surface is presented. By means of scanning electron microscopy optimum conditions for the developed morphology formation with uniform clusters distribution on a InP surface are established. |
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List of References |
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