Electron Transport Layer Material Optimization for Cs2AgBiBr6 Based Solar Cell Using SCAPS
| Authors | Sanat Das1 , Prakash Babu Kanakavalli2 , Sreevardhan Cheerla3, Sujubili Narzary1 , Priyanko Protim Gohain1 , Kunal Chakraborty1 , Samrat Paul1 |
| Affiliations |
1Advanced Materials Research and Energy Application Laboratory (AMREAL), Department of Energy Engineering, North-Eastern Hill University, Shillong-793022, Meghalaya, India 2Department of Mechanical Engineering, Velagapudi Ramakrishna Siddhartha Engineering College, Kanuru-520007, Andhra Pradesh, India 3Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation Green Fileds, Vaddeswaram-522302, Andhra Pradesh, India |
| Е-mail | paulsamrat17@gmail.com |
| Issue | Volume 16, Year 2024, Number 1 |
| Dates | Received 15 January 2024; revised manuscript received 17 February 2024; published online 28 February 2024 |
| Citation | Sanat Das, Prakash Babu Kanakavalli, Sreevardhan Cheerla, et al., J. Nano- Electron. Phys. 16 No 1, 01014 (2024) |
| DOI | https://doi.org/10.21272/jnep.16(1).01014 |
| PACS Number(s) | 73.50.Pz, 88.40.jp |
| Keywords | SCAPS-1D (22) , Double perovskite, Solar cell (51) , Photovoltaic (13) , Optimization (14) , Electron transport layer, Hole Transport Layer, Quantum Efficiency (3) , PCE (7) , FF (148) . |
| Annotation |
The toxicity and stability concerns of lead based perovskite solar cells have limited the commercialization. The lead-free Cesium based double perovskite could be a viable answer to these issues. In this present work a theoretical analysis of Cesium based double perovskite solar cell using Spiro-OMeTAD as hole transport layer and effect of different ETLs such as SnO2, ZnO-NR, TiO2 and CdS has been studied. The optimized active layer thickness of 0.3 (m has been used and a device structure of FTO/ETLs/Cs2AgBiBr6/Spiro-OMeTAD/Cu was simulated. The Solar Cell Capacitance Simulator (SCAPS-1D) was used for one dimensional simulation and analysis. The maximum PCE of 5.62 % was found using SnO2 as ETL. The device performance has been optimized by employing various ETLs and the most suitable ETL for this structure was found to be SnO2. The maximum quantum efficiency of 86.09 % has been found for SnO2 electron transport layer. The simulation results obtained in this study are encouraging and will provide insightful guidance in replacing toxic Pb-based perovskite with eco-friendly inorganic perovskite solar cell. |
|
List of References |
Other articles from this number
1) High-Gain Microstrip Patch Antenna with a Circular Slot for WiGig Applications in the V - Band [01001-1-01001-5]2) A Spiral Wire_coil Wideband Metasurface Absorber with Ultrathin and Flexible Feature for Microwave Applications [01002-1-01002-6]
3) Mechanical Properties of Pb–Sn–Ba Grid Alloys for Lead-Acid Batteries Produced by Melt Spinning Technology [01003-1-01003-6]
4) Influence of Accumulation of Impurity Atoms Ni and Fe on the Electrophysical Properties of Si Single Crystals [01004-1-01004-4]
5) Critical Values Determination of Parameters of Fixed Electron Flows System in the Processing of Oxide Coatings on Extended Optical Elements [01005-1-01005-7]
6) Effect of Electron-Phonon Interaction on the Resistivity of Metal Films as Sensor Electronics Elements [01006-1-01006-4]
7) Absorption and Transmission of Macroporous Silicon and Nanowires [01007-1-01007-6]
8) Calculations of Refractive Index Using Optical Band Gap: TiO2 Spray Pyrolysis Thin Films [01008-1-01008-4]
9) Phase Transitions and Structural Peculiarities of Divalent Nitrates [01009-1-01009-3]
10) Investigation of the Influence of Technological Factors on High-Voltage p0–n0 Junctions Based on GaAs [01010-1-01010-5]
11) SIMS Analysis of Copper-Nickel Thin Films Alloys [01011-1-01011-6]
12) Zinc Oxide Poly Crystals Heterojunction and Infrared- Blind UV-Photodetector [01012-1-01012-6]
13) Crystal Silicon Photoconductivity with Amorphous Inclusions [01013-1-01013-5]
14) Power-Optimized Information Systems for Mobile Robotics in Physical Processes [01015-1-01015-7]
15) Electronic and Magnetic Properties of the Solid Solution Cr: ZnSeTe with the Cationic Vacancy [01016-1-01016-5]
16) A Unified Study of Electrical Transport Properties of Some Liquid Alkali Elements by Pseudopotential Approach [01017-1-01017-4]
17) Temperature Impact on the Characteristics of N-Channel GaP Fin Field Effect Transistor (GaP-FinFET) [01018-1-01018-4]
18) Expeditious Identification of IGBT Switch Fault in Bidirectional Microgrid Inverter Linked to Distributed Energy Resources [01019-1-01019-5]
19) Assessing the Electrical and Thermal Characteristics of Prepared PVA-Ag NPs Composite [01020-1-01020-4]
20) Thermodynamic Analysis of the Equilibrium Vapor Phase Composition of the Cd-I2 System [01021-1-01021-4]
21) Synthesis of High Electrical Conductivity of Superconductor NiS Thin Films [01022-1-01022-6]
22) Synthesis by Organic Solar Cells SnO2 Thin Films for Gas Sensing [01023-1-01023-3]
23) Nanoparticles of ZnO/ZnS: Electrochemical Synthesis, Analysis and Prospective Applications [01024-1-01024-4]
24) Effect of Aluminum (Al: 0, 1, 2 and 3 wt.%) Doping on Electrical Properties of ZnO:Al/p-Si Heterojunction for Optoelectronic Applications [01025-1-01025-5]
25) Electrical and Mechanical Properties of Epoxy Composites Filled with Carbon and Co3O4 Nanoparticles [01026-1-01026-10]
26) Mechanical Dynamic Properties of a Piezo Transducer in the Presence of an Active Acoustic Screen [01027-1-01027-6]
27) Quantum Statistical Properties of a Three-Mode Atom-Molecule Bose-Einstein Conden-sates System for Non-Zero Intraspecific Interactions: Antibunching [01028-1-01028-6]
28) Effect of Annealing on the Physical Properties of Chemically Synthesized Nanocrystalline SnO2 Thin Films [01029-1-01029-5]
29) Physics of High Efficiency Silicon Solar Cell with Nanoinclusions of Lead Chalcogenides [01030-1-01030-5]
