An Analytical Modeling of Drain Current for Single Material Surrounded Gate Nanoscale SOI MOSFET
| Authors | Arjimand Ashraf1, Prashant Mani |
| Affiliations |
1M. Tech Scholar, ECE Department, SRM University, Delhi NCR, India 2AssociateProfessor, ECE Department, SRM University, Delhi NCR, India |
| Е-mail | arjimand66@gmail.com |
| Issue | Volume 10, Year 2018, Number 4 |
| Dates | Received 21 March 2018; published online 25 August 2018 |
| Citation | Arjimand Ashraf, Prashant Mani, J. Nano- Electron. Phys. 10 No 4, 04012 (2018) |
| DOI | http://dx.doi.org/10.21272/jnep.10(4).04012 |
| PACS Number(s) | 61.48.De |
| Keywords | SMG SGT SOI MOSFET, Linear region, Sub-threshold, Saturation (6) , DIBL (6) . |
| Annotation |
In this paper, we have presented modeling of drain current for single material surrounded gate SOI MOSFET (SMG SGT SOI MOSFET) whose channel length is 40nm. We have studied the behavior of device by varying various device parameters in Linear, Saturation, and Sub-threshold regions. We have also presented a drain current model incorporating DIBL. The comparison between previously presented model with channel length = 50 nm and our scaled model is also presented in various regions of device operation. |
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List of References |
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