A Graphical Method to Study Electrostatic Potentials of 25 nm Channel Length DG SOI MOSFETs
| Authors | M. Djerioui , M. Hebali , D. Chalabi , A. Saidane |
| Affiliations |
Labo.CaSiCCE ENP d’Oran, B.P 1523 Oran El M’Naouar 31000, Algeria |
| Е-mail | |
| Issue | Volume 10, Year 2018, Number 4 |
| Dates | Received 10 May 2018; revised manuscript received 10 August 2018; published online 25 August 2018 |
| Citation | M. Djerioui, M. Hebali, D. Chalabi, A. Saidane, J. Nano- Electron. Phys. 10 № 4, 04027 (2018) |
| DOI | https://doi.org/10.21272/jnep.10(4).04027 |
| PACS Number(s) | 85.30.De |
| Keywords | Symmetrical DG SOI MOSFET, Poisson’s equation (4) , Electrostatic potential, Numerical method. |
| Annotation |
To determine electrostatic potentials in silicon channel of undoped DG SOI MOSFET devices, a graphical approach is proposed. The method keeps close to experimental reality by taking into account flat band potential at reduced channel lengths up to 25 nm. This graphical method solves a transcendental equation of Poisson’s equation to obtain electrostatic potentials at center and surface of device as a function gate and drain bias voltages. |
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