Kinetics of Blue Emission during Ultraviolet Insolation on Germanosilicate Optical Fiber
| Authors | H. Kuswanto1, F. Goutaland2, A. Boukenter2, Y. Ouerdane2 |
| Affiliations |
1Universitas Negeri Yogyakarta, Yogyakarta, Indonesia 2Laboratoire Traitement du Signal et Instrumentation UMR CNRS 5516 Université Jean Monnet de Saint Etienne, France |
| Е-mail | herukus61@uny.ac.id |
| Issue | Volume 10, Year 2018, Number 4 |
| Dates | Received 06 February 2018; revised manuscript received 12 August 2018; published online 25 August 2018 |
| Citation | H. Kuswanto, F. Goutaland, A. Boukenter, Y. Ouerdane, J. Nano- Electron. Phys. 10 No 4, 04005 (2018) |
| DOI | http://dx.doi.org/10.21272/jnep.10(4).04005 |
| PACS Number(s) | 42.81.Dp, 61.80.Ba, 85.40.Ry, 68.60.Dv |
| Keywords | Blue (3) , Emission (13) , Ultraviolet (3) , Optical Fiber (3) , Hydrogen (20) . |
| Annotation |
The research aimed to study the kinetics of 400 nm blue emission during ultraviolet insolation on germanoslicate optical fiber, hydrogenated, and non-hydrogenataed. The hydrogenation of the fibers was carried out at room temperature under 150 atm for 4 weeks. The focused frequency doubled Argon laser ultraviolet beams were directed to the core of the unsheathed fiber. The light beams emerging from the end of the fiber were directed towards a detector. Kinetics the creation of defects in the hydrogenated fiber followed the power law for low-fluency insolation. At high fluency, the formation of defects followed the principle of two photosensitization or serial steps. |
|
List of References |
Other articles from this number
1) Impact of Sputtering Pressure on Structural, Optical, Electrical and Morphological Properties of Titanium Doped Zinc Oxide Thin films Using Metallic Target [04001-1-04001-5]2) Topography and Surface Density of Electron States on Juvenile and Defect Nanostructured (100) Cleavage Surfaces of In4Se3 Layered Crystals [04002-1-04002-12]
3) New Nonrelativistic Three-Dimensional Spectroscopic Studies of NMGECSC Potential in Presence of External Electric [04003-1-04003-8]
4) Parametric Study of Stacked Microstrip Patch Antenna with Dissimilar Substrates [04004-1-04004-4]
5) Electrons Extraction from MWCNT/PEO Composites [04006-1-04006-5]
6) Optimizing Combination of Parameters for Pull-off Adhesion Testing through Design of Experiment Study [04007-1-04007-7]
7) Thermodynamic Analysis of the Crystallization Process of Alloys Ni-Zr System [04008-1-04008-4]
8) Photoluminescence Properties of Nanoheterogenic Film Structures of NCs CdTe/TGA/Vinyl Acetate-Acrylate Copolymer [04009-1-04009-4]
9) The Mechanism of Voltage Oscillations in a Siliceous Structure with the Occurrence of Extreme Currents [04010-1-04010-4]
10) The Theoretical Study of Electron Dispersion of Some Liquid Metals Using Transition Metal Model Potential (TMMP) [04011-1-04011-4]
11) An Analytical Modeling of Drain Current for Single Material Surrounded Gate Nanoscale SOI MOSFET [04012-1-04012-5]
12) Effect of Intrinsic Layer Thickness on PIN Structure for Tandem Solar Cell Based on Indium Gallium Nitride Using AMPS -1D [04013-1-04013-4]
13) Gunn Diodes Based on Graded InGaP-InPAs [04014-1-04014-6]
14) Peculiarities of Electroconductivity and Magnetoresistance in Silicon Whiskers with Doping Concentration in the Vicinity to Metal-insulator Transition at Low Temperatures [04015-1-04015-7]
15) Magnetoresistive and Magnetooptical Properties of Double-component Film Alloys Based on Iron [04016-1-04016-4]
16) A New Electro-Thermal Modeling of Low Voltage Power MOSFET with Junction Tempera-ture Dependent Foster (RC) Thermal Network [04017-1-04017-5]
17) Dislocation Hysteresis in Mixed State of Superconductor II Тype [04018-1-04018-6]
18) p-i-n Photodiode Based on Silicon with Short Rise Time [04019-1-04019-5]
19) Improvement of Electrochemical Supercapacitors by Using Nanostructured Semiconductors [04020-1-04020-6]
20) Computer Simulation of the Negative Hydrogen Ion Source Extraction System Using IBSimu Package [04021-1-04021-9]
21) Photoinduced Spatiotemporal Oscillations and Self-Organization of Dissipative Structures in Polymer-Immobilized Dispersed Semiconductors [04022-1-04022-8]
22) Investigation of Photoelectric Converters Based on Different Semiconductor Materials [04023-1-04023-6]
23) Electrical Conductivity and Dielectric Relaxation Processes of the Ceramic System Y2O3-ZrO2-SrTiO3-BiScO3 [04024-1-04024-4]
24) Increase the Efficiency of the Linear Piezoelectric Motor [04025-1-04025-5]
25) Quantum Colliding of Two the Vertical Bloch Lines in the Domain Walls of Uniaxial Ferromagnetic Film [04026-1-04026-4]
26) A Graphical Method to Study Electrostatic Potentials of 25 nm Channel Length DG SOI MOSFETs [04027-1-04027-4]
27) The Increase in the Probability of Failure-Free Operation of the IR-Devices Homing and Tracking by the of Electron Beam Processing of Optical Fairings on the Areas [04028-1-04028-7]
28) PbMnI2 Magnetic Studies of PbMnI2 Layered Diluted Magnetic Semiconductor Nanoparticles [04029-1-04029-5]
29) Ab initio Calculation of Impurity-Dislocation Interaction in Silicon [04030-1-04030-5]
30) Influence of Heat Treatment Conditions on the Magnetoresistive Properties of Three-layer Structures Fe0,2Co0,8/Cu/Fe0,2Co0,8 [04031-1-04031-5]
31) Features of the Structure of the FeCoNiCrMn High Entropy Alloys [04032-1-04032-10]
32) Anthracite-derived Porous Carbon as Electrode Material of Lithium Power Sources [04033-1-04033-5]
33) Ab initio Study of the Effect of H2O Molecules Adsorption on the Semiconducting Graphene Nanoribbon [04034-1-04034-3]
