Electrical Set-Reset Phenomenon in Thallium Doped Ge-Te Glasses Suitable for Phase Change Memory Applications
| Authors | Mohammad Mahbubur Rahman1, K. Rukmani1, S. Asokan2 |
| Affiliations | 1 Department of Physics, Bangalore University, Bangalore 560056, India 2 Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012, India |
| Е-mail | dinar_eic@yahoo.com |
| Issue | Volume 3, Year 2011, Number 1, Part 3 |
| Dates | Received 04 February 2011, in final form 17 June 2011, published online 22 June 2011 |
| Citation | M.M. Rahman, K. Rukmani, S. Asokan, J. Nano- Electron. Phys. 3 No1, 479 (2011) |
| DOI | |
| PACS Number(s) | 65.6 + a, 73.61 Jc, 77.80 Fm |
| Keywords | Chalcogenide glass (5) , Thallium doping, Electrical switching, Set-reset, Phase change memory (2) . |
| Annotation |
Ge17Te83-xTlx (x = 2, 3, 6, 8, 10) glasses have been prepared by melt quenching method and their amorphous nature was confirmed by XRD spectra. I-V characteristics and repeatability of electrical switching were investigated for all the glasses in order to find out their suitability for phase change memory applications. A comparison has been given with Ge2Sb2Te5 the most commonly used material for phase change memory application. The entire series of glasses exhibited memory type of electrical switching but only the composition Ge17Te81Tl2 was able to withstand SET-RESET pulses for more than 10 cycles. The other samples show repeatability for only a few cycles with the degradation of threshold voltage. |
|
List of References |
Other articles from this number
1) Ferromagnetism in Nitrogen Doped Magnesium Oxide: a First Principle Study [0453-0459]2) Optical, Electrical and Raman Properties of Annealed Hydrogenated Mg/Co Bilayer Thin Films [0460-0468]
3) Density Functional Modelling of Elastic Properties of Elemental Semiconductors [0469-0473]
4) Effect of Grain Size on the Threshold Voltage for Double-Gate Polycrystaline Silicon MOSFET [0474-0478]
5) Studies on Electrochemical Deposition and Characterization of Co3O4 Films [0486-0498]
6) Dependence of Structural, Electrical, Optical and Surface Morphological Properties of Sol-Gel Spin Coated CdO Thin Films on the Process Temperature [0499-0506]
7) Growth Structural and Optical Properties of the Thermally Evaporated tin Diselenide (SnSe2) Thin Films [0507-0513]
8) Synthesis and Electroluminescence Characterization of Cadmium Complex [0514-0520]
9) Optoelectric Properties of Thermally Evaporated ClAlClPc Thin Films [0521-0528]
10) Theoretical Study on the Electrical Properties of Some Semiconducting Rare Earth Chalcogenides Sm1-xEuxS and Sm1-xYbxS Under Pressure [0529-0535]
11) Study of Charge Transfer in Semiconducting Rare Earth Chalcogenide Thulium Telluride (TmTe) [0536-0541]
12) Inprovement of Field Emission Properties of PBS Thin Films by Amorphous Carbon Coating [0542-0550]
13) Effect of Number of Filaments on the Structure, Composition and Electrical Properties of µc-Si:h Layers Deposited Using HWCVD Technique [0551-0557]
14) Electrical Characterization of Electron Beam Evaporated Cd1-xSex Thin Films [0558-0562]
15) Optical Behaviour of ZnO/Au Nanojunctions [0563-0568]
16) Two Dimensional Analytical Modeling for SOI and SON MOSFET and Their Performance Comparison [0569-0575]
17) Two-Dimensional Analytical Modeling of Threshold Voltage of Doped Short-Channel Triple-Material Double-Gate (Tm-Dg) MOSFET's [0576-0583]
18) Effect of Radial and Axial Deformation on Electron Transport Properties in a Semiconducting Si-C Nanotube [0584-0589]
19) Nanostructured Hydrogenated Silicon Films by Hot-Wire Chemical Vapor Deposition: the Influence of Substrate Temperature on Material Properties [0590-0600]
20) Laser Induced Nonlinear Optical Properties of Zinc Oxide Thin Film Prepared by Sol-Gel Method [0601-0609]
21) Magnetic and Electric Properties of Semiconduter Bismuth tri Sulphide (Bi2S3) Grown by gel Method [0610-0619]
22) Structural Properties of Nickel Doped Cadmium Sulfide [0620-0625]
