Authors | Brijesh Kumar Singh, Lucky Agarwal , Shweta Tripathi |
Affiliations | Department of Electronics & Communication Engineering, Motilal Nehru National, Institute of Technology, 211004 Allahabad, India |
Е-mail | shtri@mnnit.ac.in |
Issue | Volume , Year , Number |
Dates | Received 14 April 2016; published online 29 September 2016 |
Citation | Brijesh Kumar Singh, Lucky Agarwal, Shweta Tripathi, J. Nano- Electron. Phys. 8 No 3, 03025 (2016) |
DOI | 10.21272/jnep.8(3).03025 |
PACS Number(s) | 77.55.hf, 81.20.Fw |
Keywords | p-type ZnO, Sol-gel method (4) , Bi doping. |
Annotation | In the present work, we report stable and reproducible p-ZnO thin film on n-type and p-type silicon substrate using sol-gel spin coating method. Bismuth doped ZnO film has been analyzed with hot point probe method which shows that 10 mol % Bi doped films exhibits p-nature. The XRD and AFM result of the films show that films are polycrystalline and almost uniform throughout the substrate. The various optical parameters like dielectric constant, extinction coefficient and refractive index have been calculated over the visible range of wavelength region. |
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