Refractive Index and Dielectric Constant Evaluation of Bi Doped p -ZnO Thin FilmDeposited by Sol-gel Method

Authors Brijesh Kumar Singh, Lucky Agarwal , Shweta Tripathi
Affiliations

Department of Electronics & Communication Engineering, Motilal Nehru National, Institute of Technology, 211004 Allahabad, India

Е-mail shtri@mnnit.ac.in
Issue Volume , Year , Number
Dates Received 14 April 2016; published online 29 September 2016
Citation Brijesh Kumar Singh, Lucky Agarwal, Shweta Tripathi, J. Nano- Electron. Phys. 8 No 3, 03025 (2016)
DOI 10.21272/jnep.8(3).03025
PACS Number(s) 77.55.hf, 81.20.Fw
Keywords p-type ZnO, Sol-gel method (4) , Bi doping.
Annotation In the present work, we report stable and reproducible p-ZnO thin film on n-type and p-type silicon substrate using sol-gel spin coating method. Bismuth doped ZnO film has been analyzed with hot point probe method which shows that 10 mol % Bi doped films exhibits p-nature. The XRD and AFM result of the films show that films are polycrystalline and almost uniform throughout the substrate. The various optical parameters like dielectric constant, extinction coefficient and refractive index have been calculated over the visible range of wavelength region.

List of References