Carrier Scattering Mechanisms in Bismuth Films Doped with Tellurium
| Authors | D.Yu. Matveev |
| Affiliations | Astrakhan State University, 20a, Tatischev st., 4140056 Astrakhan, Russia |
| Е-mail | Danila200586@mail.ru |
| Issue | Volume , Year , Number |
| Dates | Received 15 May 2016; published online 29 September 2016 |
| Citation | D.Yu. Matveev, J. Nano- Electron. Phys. 8 No 3, 03015 (2016) |
| DOI | 10.21272/jnep.8(3).03015 |
| PACS Number(s) | 73.50.Gr, 73.50.Jt |
| Keywords | Thin films (60) , Bismuth (9) , Tellurium (3) , Mobility (10) , Size effect (6) . |
| Annotation | The article compares carrier mobility in monocrystals, as well as monocrystal and block films of different width thus defining carrier contribution to interaction with phonons, surface, boundaries and structural defects of crystallites in bismuth films doped with tellurium. It is determined that there is a linear dependence of inverse electron mobility on inverse width of bismuth film doped with tellurium. |
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List of References |
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