Effects of High-k Dielectrics with Metal Gatefor Electrical Characteristics of SOI TRI-GATE FinFET Transistor
| Authors | Fatima Zohra Rahou, A. Guen Bouazza, B. Bouazza |
| Affiliations | Department of Electronic and Electrical Engineering, Faculty of Technology, University of Abou-Bekr Belkaid, Tlemcen, Algeria |
| Е-mail | f_rahou@yahoo.fr |
| Issue | Volume , Year , Number |
| Dates | Received 22 April 2016; published online 29 September 2016 |
| Citation | Fatima Zohra Rahou, A. Guen Bouazza, B. Bouazza, J. Nano- Electron. Phys. 8 No 3, 03012 (2016) |
| DOI | 10.21272/jnep.8(3).03012 |
| PACS Number(s) | 85.30.Tv |
| Keywords | Technology SOI, Short-channel effects (SCEs), Multi-gate SOI MOSFET, SOI TRI-GATE FinFET, High-k dielectric (2) , Silvaco Software. |
| Annotation | In this paper, we present the results of a 3D-numerical simulation of SOI TRI-GATE FinFET transistor. 3D-device structure, based on technology SOI (Silicon-On-Insulator) is described and simulated by using SILVACO TCAD tools and we compare the electrical characteristics results for Titanium Nitride (TiN) fabricated on Al2O3 (k ~ 9), HfO2 (k ~ 20) and La2O3 (k ~ 30) gate dielectric. Excellent dielectric properties such as high-k constant, low leakage current, threshold voltage and electrical characteristics were demonstrated. The implementation of high-k gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components. From the simulation result; it was shown that HfO2 is the best dielectric material with metal gate TiN, which giving better subthreshold swing (SS), drain-induced barrier lowing (DIBL), leakage current Ioff and Ion/Ioff ratio. |
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List of References |
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