| Title |
Temperature Dependence of 1/f Noise in Gallium Nitride Epitaxial Layer |
| Authors |
Ashutosh Kumar, Ashish Kumar, K. Asokan, V. Kumar, R. Singh |
| Issue |
Volume 3, Year 2011, Number 1, Part 4 |
| Pages |
0676 - 0679 |
| Title |
Metal-Semiconductor Field-Effect Transistors Fabricated Using DVT Grown n-MoSe2 Crystals With Cu-Schottky Gates |
| Authors |
C.K. Sumesh, K.D. Patel, V.M. Pathak, R.Srivastava |
| Issue |
Volume 3, Year 2011, Number 1, Part 4 |
| Pages |
0709 - 0713 |
| Title |
Analytical Estimate of Open-Circuit Voltage of a Schottky-Barrier Solar Cell Under High Level Injection |
| Authors |
Pramila Mahala, Sanjay Kumar Behura, A. Ray |
| Issue |
Volume 3, Year 2011, Number 1, Part 5 |
| Pages |
0979 - 0991 |
| Title |
Features of Formation of Ohmic Contacts and Gate on Epitaxial Heterostructure of AlGaN / GaN High Electron Mobility Transistor |
| Authors |
I.A. Rogachev, A.V. Knyazkov, O.I. Meshkov, A.S. Kurochka |
| Issue |
Volume 8, Year 2016, Number 2 |
| Pages |
02044-1 - 02044-3 |
