| Title |
Gate Leakage Current Reduction With Advancement of Graded Barrier AlGaN/GaN HEMT |
| Authors |
Palash Das, Dhrubes Biswas |
| Issue |
Volume 3, Year 2011, Number 1, Part 5 |
| Pages |
0972 - 0978 |
| Title |
Prospects of III-Vs for Logic Applications |
| Authors |
U.P. Gomes, Y.K. Yadav, S. Chowdhury, K. Ranjan, S. Rathi, D. Biswas |
| Issue |
Volume 4, Year 2012, Number 2 |
| Pages |
02009-1 - 02009-5 |
| Title |
Features of Formation of Ohmic Contacts and Gate on Epitaxial Heterostructure of AlGaN / GaN High Electron Mobility Transistor |
| Authors |
I.A. Rogachev, A.V. Knyazkov, O.I. Meshkov, A.S. Kurochka |
| Issue |
Volume 8, Year 2016, Number 2 |
| Pages |
02044-1 - 02044-3 |
