Results (4):

Title Gate Leakage Current Reduction With Advancement of Graded Barrier AlGaN/GaN HEMT
Authors Palash Das, Dhrubes Biswas
Issue Volume 3, Year 2011, Number 1, Part 5
Pages 0972 - 0978
Title Prospects of III-Vs for Logic Applications
Authors U.P. Gomes, Y.K. Yadav, S. Chowdhury,  K. Ranjan, S. Rathi, D. Biswas
Issue Volume 4, Year 2012, Number 2
Pages 02009-1 - 02009-5
Title Features of Formation of Ohmic Contacts and Gate on Epitaxial Heterostructure of AlGaN / GaN High Electron Mobility Transistor
Authors I.A. Rogachev, A.V. Knyazkov, O.I. Meshkov, A.S. Kurochka
Issue Volume 8, Year 2016, Number 2
Pages 02044-1 - 02044-3
Title Effect of ZrO2 Dielectric over the DC Characteristics and Leakage Suppression in AlGaN/InGaN/GaN DH MOS-HEMT
Authors V. Sandeep, J. Charles Pravin
Issue Volume 13, Year 2021, Number 4
Pages 04007-1 - 04007-5