| Title |
Gate Leakage Current Reduction With Advancement of Graded Barrier AlGaN/GaN HEMT |
| Authors |
Palash Das, Dhrubes Biswas |
| Issue |
Volume 3, Year 2011, Number 1, Part 5 |
| Pages |
0972 - 0978 |
| Title |
Confined Energy State Based Hypothetical Observations about Device Parameters of AlGaN / GaN HEMT |
| Authors |
Palash Das, Dhrubes Biswas |
| Issue |
Volume 7, Year 2015, Number 1 |
| Pages |
01006-1 - 01006-3 |
| Title |
Theoretical Analysis of Optical Gain in GaN / AlxGa1 – x N Quantum Well Lasers |
| Authors |
K. Fellaoui, D. Abouelaoualim, A. Elkadadra, A. Oueriagli |
| Issue |
Volume 7, Year 2015, Number 4 |
| Pages |
04061-1 - 04061-3 |
| Title |
Features of Formation of Ohmic Contacts and Gate on Epitaxial Heterostructure of AlGaN / GaN High Electron Mobility Transistor |
| Authors |
I.A. Rogachev, A.V. Knyazkov, O.I. Meshkov, A.S. Kurochka |
| Issue |
Volume 8, Year 2016, Number 2 |
| Pages |
02044-1 - 02044-3 |
