Results (2):

Title Heteroepitaxy Growth of SiC on the Substrates of Porous Si Method of Substitution of Atoms
Authors V.V. Kidalov, S.A. Kukushkin,,,, A.V. Osipov,,,, A.V. Redkov,, A. S. Grashchenko, I.P. Soshnikov,, M.E. Boiko, M.D. Sharkov, A.F. Dyаdenchuk
Issue Volume 10, Year 2018, Number 3
Pages 03026-1 - 03026-6
Title An Ultra-low Power, High SNM, High Speed and High Temperature of 6T-SRAM Cell in 3C-SiC 130 nm CMOS Technology
Authors D. Berbara, M. Abboun Abid, M. Hebali, M. Benzohra, D. Chalabi
Issue Volume 12, Year 2020, Number 4
Pages 04024-1 - 04024-4