Influence of Tunable Work Function on SOI-based DMG Multi-channel Junctionless Thin Film Transistor
| Authors | S. Ashok Kumar , J. Charles Pravin |
| Affiliations |
Department of Electronics and Communication Engineering, Kalasalingam Academy of Research and Education, Krishnankoil, TamilNadu, India |
| Е-mail | jcharlespravin@gmail.com |
| Issue | Volume 13, Year 2021, Number 1 |
| Dates | Received 02 December 2020; revised manuscript received 14 February 2021; published online 25 February 2021 |
| Citation | S. Ashok Kumar, J. Charles Pravin, J. Nano- Electron. Phys. 13 No 1, 01005 (2021) |
| DOI | https://doi.org/10.21272/jnep.13(1).01005 |
| PACS Number(s) | 72.15.Eb, 85.30.Tv |
| Keywords | Junctionless tri-gate transistor, Multi-channel, TiN (97) , Dual metal gate (DMG), Thin-film transistor, SOI (16) . |
| Annotation |
This paper focuses on the effects occurring due to the inclusion of multi-channel titanium nitride (TiN) material in a dual metal gate (DMG) junctionless (JL) thin film transistor. Two nanosheets have been implemented in a JL tri-gate transistor, which is separated by the gate oxide layer and surrounded by the gate layer. The thickness of TiN material placed in between the gate oxide and gate layer helps in tuning the work function of the gate. The comparison has been done between single channel with single metal gate, double channel with single metal gate, double channel with DMG and double channel with DMG and TiN. Strains have been created in the devices by implementing TiN and DMG. An improvement of 31 % in the output current has been obtained using DMG double channel device when compared with single gate single channel device. The comparison has been carried out in Sentaurus technology computer aided design (TCAD). The drift diffusion model, the mobility model, which includes the effects of doping concentration and electric field, the bandgap narrowing model and the Shockley-Read-Hall recombination model have been used to calculate outputs. The proposed structure acquires higher transconductance values than normal tri-gate devices. It has been verified that when varying the TiN thickness, the potential has been tuned. Due to the tuning of the work function, the performance of the device has been improved. |
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