Effect of the Type of Electrolyte Аnion on the Porous InP Morphology Obtained by the Electrochemical Etching
| Authors | Ya.A. Suchikova1 , V.V. Kidalov1 , G.A. Sukach2 |
| Affiliations | 1 Berdyansk State Pedagogical University, 4, Shmidta Str., 71100, Berdyansk, Ukraine 2 V.Lashkaryov`s Institute of Semiconductor Physics NASU, 41, Pr. Nauki, 03028, Kiev, Ukraine |
| Е-mail | V.V.Kidalov@mail.ru |
| Issue | Volume 1, Year 2009, Number 4 |
| Dates | Received 05.11.2009, in final form 01.12.2009 |
| Citation | Ya.A. Suchikova, V.V. Kidalov, G.A. Sukach, J. Nano- Electron. Phys. 1 No4, 111 (2009) |
| DOI | |
| PACS Number(s) | 61.43.Gt, 78.30.Fs, 78.55.m |
| Keywords | Porous InP, Electrochemical etching, Scanning electron microscopy (16) , Nanostructures (8) , Threshold voltage (15) . |
| Annotation |
In this work the analysis of the dependence of the porous InP morphology on the type of reacting anion is presented. It is shown that nanoporous InP layers are obtained under certain conditions of electrochemical etching. |
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List of References |
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