ZnTe/CdTe Thin-Film Heterojunctions
| Authors | M.M. Kolesnyk1, A.S. Opanasyuk1 , N.V. Tyrkusova1, S.N. Danilchenko2 |
| Affiliations | 1 Sumy State University, 2, Rimsky-Korsakov Str., 40007, Sumy, Ukraine 2 Institute of Applied Physics, National Academy of Science of Ukraine, 58, Petropavlivs’ka Str., 40030, Sumy, Ukraine
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| Е-mail | maxxkol@yahoo.com |
| Issue | Volume 1, Year 2009, Number 2 |
| Dates | Received 25 June 2009, in final form 8 July 2009 |
| Citation | M.M. Kolesnyk, A.S. Opanasyuk, N.V. Tyrkusova, S.N. Danilchenko, J. Nano- Electron. Phys. 1 No2, 8 (2009) |
| DOI | |
| PACS Number(s) | 73.40.Lq, 73.61.Ga |
| Keywords | ZnTe/CdTe heterojunctions, Structure factor, Grain size (4) , Current-voltage characteristic (12) , Charge-transport mechanism. |
| Annotation |
In this work we have studied the structural and electrophysical properties of the ZnTe/CdTe heterojunctions, obtained by the method of thermal evaporation in quasi-closed volume. Investigations allowed to define the films structural parameters, such as texture, lattice constant, sizes of grains and coherent-scattering domains, micro-deformation level, and their dependence on the conditions of films production as well. Electrophysical investigations allowed to define the charge-transport mechanism in heterojunction. |
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List of References |
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