Ellipsometric and Maxwell-Garnett Model Studies of Silicon Nitride-based Bilayer Structures Elaborated by LPCVD
| Authors | A. Beddiaf1,2, , M. Medjaldi1 , A. Lanani1, D. Djamai3 |
| Affiliations | 1SATIT Laboratory, Abbes Laghrour University, Khenchela, Algeria 2MoDERNa Laboratory, University of Constantine 1, Route d’ Ain El Bey, 25000 Constantine, Algeria 3ISMA Laboratory, Abbes Laghrour University, Khenchela, Algeria |
| Е-mail | beddiafaziz@yahoo.fr |
| Issue | Volume 17, Year 2025, Number 3 |
| Dates | Received 15 March 2025; revised manuscript received 20 June 2025; published online 27 June 2025 |
| Citation | A. Beddiaf, [footnoteRef:], M. Medjaldi, и др., J. Nano- Electron. Phys. 17 No 3, 03006 (2025) |
| DOI | https://doi.org/10.21272/jnep.17(3).03006 |
| PACS Number(s) | 78.20. − e, 82.33.Ya |
| Keywords | Ellipsometry (5) , Silicon oxynitride, Refractive index (3) , Maxwell-Garnett. |
| Annotation | In this work, we study the geometrical and optical properties of thin layers’ silicon oxynitride (SiOxNy) prepared by low pressure chemical vapor deposition technique from the SiH2Cl2, N2O and NH3 at 850 °C, using spectroscopic ellipsometry measurements. For this purpose, Maxwell-Garnett (MG) model was used. It is applied to silicon oxynitride, considering the material as a heterogeneous medium formed by silicon oxide (SiO2) and the silicon nitride (Si3N4). The thickness of SiOxNy films was computed based on the gas flow rate of NH3 and with the ratio R NH3/ N2O. Moreover, its refractive index was calculated at wavelength 830 nm as a function of both gas flow rate of NH3 and N2O. In addition, the volume fraction of SiO2 and Si3N4 was evaluated versus this flow rates. It was observed that the thickness increases with increasing gas flow rate of NH3 and with the ratio R. The results also show that the refractive index decreases with gas flow rate of N2O. However, it increases with the rate of NH3, ranging from 1.458 to 1.597. Furthermore, the results proved that knowing the volume fraction of SiO2 and Si3N4 allows us to quantify the evolution of the refractive index of SiOxNy. Finally, this paper makes it possible to choose the experimental parameters of precursors deposition based on the application to which it is dedicated. |
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List of References English version of article |
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